Thermal stability of magnetic tunneling junctions with MgO barriers for high temperature spintronics

被引：46

作者：

Liu, Xiaoyong ^{[1
]}

Mazumdar, Dipanjan

Shen, Weifeng

Schrag, B. D.

Xiao, Gang

机构：

[1] Micro Magnet Inc, Fall River, MA 02720 USA

[2] Brown Univ, Dept Phys, Providence, RI 02912 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2219997

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal stability of MgO-based magnetic tunnel junctions has been investigated from room temperature up to 500 degrees C, in both the memory and sensor configurations. Junctions showed magnetoresistances of over 200% at room temperature and over 100% at 300 degrees C. Below 375 degrees C, the resistance of the parallel state remains constant, while the antiparallel state resistance linearly decreases with temperature. Above that, a rapid increase in the resistance of both states was observed, along with an irreversible loss of magnetoresistance. Junctions in the sensor configuration exhibited a constant sensitivity of 1.0%/Oe at temperatures up to 300 degrees C before getting degraded. (c) 2006 American Institute of Physics.

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页数：3

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