Comparison of high resolution negative electron beam resists

被引：31

作者：

Bilenberg, B. ^{[1
]}

Scholer, M.

Shi, P.

Schmidt, M. S.

Boggild, P.

Fink, M.

Schuster, C.

Reuther, F.

Gruetzner, C.

Kristensen, A.

机构：

[1] Tech Univ Denmark, Dept Micro & Nanotechnol, DK-2800 Lyngby, Denmark

[2] Tech Univ Denmark, DANCHIP, DK-2800 Lyngby, Denmark

[3] Microresist Technol GmbH, D-12555 Berlin, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 04期

关键词：

D O I：

10.1116/1.2210002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Four high resolution negative electron beam resists are compared: TEBN-1 from Tokuyama Corp. Japan, ma-N 2401XP and mr-L 6000AXP from microresist technology GmbH Germany, and SU-8 2000 series from MicroChem Corp., USA. Narrow linewidth high density patterns are defined by 100 kV electron beam lithography, and the pattern is transferred into silicon by a highly anisotropic SF6/O-2/CHF3 based reactive ion etch process with a selectivity between silicon and the investigated resists of approximately 2.20 nm half-pitch lines and 10 nm lines with a pitch down to 60 nm are written and transferred into silicon. (c) 2006 American Vacuum Society.

引用

页码：1776 / 1779

页数：4

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