Band alignment and photoluminescence up-conversion at the GaAs/(ordered)GaInP2 heterojunction

被引：37

作者：

Zeman, J

Martinez, G

Yu, PY

Uchida, K

机构：

[1] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

[3] NIPPON SANSO TSUKUBA LAB,TSUKUBA,IBARAKI,JAPAN

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.55.R13428

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The up-conversion of photoluminescence in a series of GaAs/(ordered)GaInP2 heterojunctions has been investigated using high magneticfield and high pressure. Samples which exhibit this effect have been demonstrated to have a type-II band alignment and also localization centers in GaInP2, Some samples revealing a type-I band alignment do not show this effect at atmospheric pressure. However, such a sample exhibits up-conversion under a hydrostatic pressure of 1.2 GPa. Our results establish a type-II band alignment as one of the key elements for explaining the observed up-conversion.

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页码：13428 / 13431

页数：4

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