Thin oxides on passivated silicon irradiated by focused ion beams

被引：7

作者：

Fuhrmann, H ^{[1
]}

Döbeli, M

Kötz, R

Mühle, R

Schnyder, B

机构：

[1] ETH Zurich, Paul Scherrer Inst, Inst Particle Phys, CH-8093 Zurich, Switzerland

[2] Paul Scherrer Inst, Gen Energy Res, CH-5232 Villigen, Switzerland

[3] ETH Zurich, Paul Scherrer Inst, Inst Particle Phys, CH-8093 Zurich, Switzerland

[4] Paul Scherrer Inst, Gen Energy Res, CH-5232 Villigen, Switzerland

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 06期

关键词：

D O I：

10.1116/1.590956

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

When a hydrogen-terminated Si (100) surface is irradiated with a focused ion beam, the irradiated areas are not affected by a subsequent KOH etch. We discuss the influence of irradiation-induced doping, amorphization, defect doping, and surface oxidation on this effect. Point defects and amorphization were measured by thermal wave analysis. X-ray photoelectron spectroscopy was used for surface analysis. We show that both damage and oxidation can lead to the observed etch stop in KOH, but can be controlled independently from each other. (C) 1999 American Vacuum Society. [S0734-211X(99)08806-X].

引用

页码：3068 / 3071

页数：4

共 7 条

[1] NATURE OF THE USE OF ADVENTITIOUS CARBON AS A BINDING-ENERGY STANDARD [J].

BARR, TL ;

SEAL, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03) :1239-1246

[2] HIGH-RESOLUTION PATTERNING OF SILICON BY SELECTIVE GALLIUM DOPING [J].

BERRY, IL ;

CAVIGLIA, AL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1059-1061

[3] Silicon micro/nanomechanical device fabrication based on focused ion beam surface modification and KOH etching [J].

Brugger, J ;

Beljakovic, G ;

Despont, M ;

deRooij, NF ;

Vettiger, P .

MICROELECTRONIC ENGINEERING, 1997, 35 (1-4) :401-404

[4] Focused ion-beam structuring of Si and Si/CoSi2 heterostructures using adsorbed hydrogen as a resist [J].

Fuhrmann, H ;

Döbeli, M ;

Mühle, R ;

Suter, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03) :945-948

[5] EFFECTS OF SURFACE HYDROGEN ON THE AIR OXIDATION AT ROOM-TEMPERATURE OF HF-TREATED SI(100) SURFACES [J].

HIRASHITA, N ;

KINOSHITA, M ;

AIKAWA, I ;

AJIOKA, T .

APPLIED PHYSICS LETTERS, 1990, 56 (05) :451-453

[6] HARTREE-SLATER SUBSHELL PHOTOIONIZATION CROSS-SECTIONS AT 1254 AND 1487EV [J].

SCOFIELD, JH .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1976, 8 (02) :129-137

[7] LOCALIZED FABRICATION OF SI NANOSTRUCTURES BY FOCUSED ION-BEAM IMPLANTATION [J].

STECKL, AJ ;

MOGUL, HC ;

MOGREN, S .

APPLIED PHYSICS LETTERS, 1992, 60 (15) :1833-1835

← 1 →