Luminescence properties of ZnO layers grown on Si-on-insulator substrates

被引:41
作者
Kumar, Bhupendra
Gong, Hao
Vicknesh, S.
Chua, S. J.
Tripathy, S. [1 ]
机构
[1] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 119260, Singapore
[2] Inst Mat Res & Engn, Singapore 117602, Singapore
关键词
D O I
10.1063/1.2357870
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors report on the photoluminescence properties of polycrystalline ZnO thin films grown on compliant silicon-on-insulator (SOI) substrates by radio frequency magnetron sputtering. The ZnO thin films on SOI were characterized by micro-Raman and photoluminescence (PL) spectroscopy. The observation of E(2)(high) optical phonon mode near 438 cm(-1) in the Raman spectra of the ZnO samples represents the wurtzite crystal structure. Apart from the near-band-edge free exciton (FX) transition around 3.35 eV at 77 K, the PL spectra of such ZnO films also showed a strong defect-induced violet emission peak in the range of 3.05-3.09 eV. Realization of such ZnO layers on SOI would be useful for heterointegration with SOI-based microelectronics and microelectromechanical systems. (c) 2006 American Institute of Physics.
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页数:3
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