The authors report on the photoluminescence properties of polycrystalline ZnO thin films grown on compliant silicon-on-insulator (SOI) substrates by radio frequency magnetron sputtering. The ZnO thin films on SOI were characterized by micro-Raman and photoluminescence (PL) spectroscopy. The observation of E(2)(high) optical phonon mode near 438 cm(-1) in the Raman spectra of the ZnO samples represents the wurtzite crystal structure. Apart from the near-band-edge free exciton (FX) transition around 3.35 eV at 77 K, the PL spectra of such ZnO films also showed a strong defect-induced violet emission peak in the range of 3.05-3.09 eV. Realization of such ZnO layers on SOI would be useful for heterointegration with SOI-based microelectronics and microelectromechanical systems. (c) 2006 American Institute of Physics.
机构:Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
Cao, BQ
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Cai, WP
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
Cai, WP
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Zeng, HB
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机构:Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Chen, YW
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Liu, YC
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NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R ChinaNE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Liu, YC
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Lu, SX
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Lu, SX
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Xu, CS
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Xu, CS
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Shao, CL
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Shao, CL
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Wang, C
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Wang, C
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Zhang, JY
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Zhang, JY
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Lu, YM
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Lu, YM
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Shen, DZ
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Shen, DZ
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Fan, XW
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
机构:Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
Cao, BQ
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Cai, WP
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Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
Cai, WP
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Zeng, HB
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机构:Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Chen, YW
;
Liu, YC
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NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R ChinaNE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Liu, YC
;
Lu, SX
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Lu, SX
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Xu, CS
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Xu, CS
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Shao, CL
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Shao, CL
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Wang, C
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Wang, C
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Zhang, JY
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Zhang, JY
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Lu, YM
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Lu, YM
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Shen, DZ
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China
Shen, DZ
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Fan, XW
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机构:NE Normal Univ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Peoples R China