Ultralow resistance-area product of 0.4 Ω(μm)2 and high magnetoresistance above 50% in CoFeB/MgO/CoFeB magnetic tunnel junctions

被引：103

作者：

Nagamine, Yoshinori

Maehara, Hiroki

Tsunekawa, Koji

Djayaprawira, David D.

Watanabe, Naoki

Yuasa, Shinji

Ando, Koji

机构：

[1] Canon ANELVA Corp, Electron Device Equipment Div, Fuchu, Tokyo 1838508, Japan

[2] Natl Inst Adv Ind Sci & Technol, Nanoelectron Res Inst, Tsukuba, Ibaraki 3058568, Japan

[3] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

[4] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 16期

关键词：

D O I：

10.1063/1.2352046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An ultralow resistance-area (RA) product of 0.4 Omega(mu m)(2) was achieved in CoFeB/MgO/CoFeB magnetic tunnel junctions with a high magnetoresistance ratio of 57% at room temperature. Various growth conditions for polycrystalline MgO(001) tunneling barrier were optimized to improve the crystalline orientation of the MgO(001) layer, which resulted in a significant enhancement of magnetoresistance in an ultralow RA region below 1 Omega(mu m)(2). Removal of residual H2O molecules from a growth chamber was especially effective in improving the crystalline orientation. The present achievements will enable the development of highly sensitive read heads for ultrahigh-density hard disk drives.

引用

页数：3

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