Gated spin relaxation in (110)-oriented quantum wells

被引：9

作者：

Henini, M ^{[1
]}

Karimov, OZ

John, GH

Harley, RT

Airey, RJ

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] Univ Southampton, Dept Phys & Astron, Southampton SO17 1BJ, Hants, England

[3] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 23卷 / 3-4期

基金：

英国工程与自然科学研究理事会;

关键词：

quantum wells; spin dynamics; Rashba effect;

D O I：

10.1016/j.physe.2003.11.280

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Growth, photoluminescence characterisation and time-resolved optical measurements of electron spin dynamics in (110)-oriented GaAs/AlGaAs quantum wells are described. Conditions are given for MBE growth of good-quality quantum wells, judged by the width of low-temperature excitonic photoluminescence. At 170 K the electron spin relaxation rate in (110)-oriented wells shows a 100-fold reduction compared to equivalent (10 0)-oriented wells and also a 10-fold increase with applied electric field from 20 to 80 kV cm(-1). There is evidence for similar dramatic effects at 300 K. Spin relaxation is field independent below 20 kV cm(-1) reflecting quantum well asymmetry. The results indicate the achievability of voltage-gateable quantum well spin memory time longer than 10 ns at room temperature simultaneously with high electron mobility. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：309 / 314

页数：6

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