GROWTH AND ELECTRICAL-TRANSPORT PROPERTIES OF VERY HIGH-MOBILITY 2-DIMENSIONAL HOLE GASES DISPLAYING PERSISTENT PHOTOCONDUCTIVITY

被引：36

作者：

HENINI, M ^{[1
]}

RODGERS, PJ ^{[1
]}

CRUMP, PA ^{[1
]}

GALLAGHER, BL ^{[1
]}

HILL, G ^{[1
]}

机构：

[1] UNIV SHEFFIELD,DEPT ELECTR ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 16期

关键词：

D O I：

10.1063/1.112791

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the growth by molecular beam epitaxy of modulation-doped GaAs-(Ga,Al)As heterostructures with low-temperature hole mobility exceeding 1.2 x 10(6) cm2 V-1 s-1 with carrier concentrations as low as 0.8 x 10(11) cm-2: The highest value observed at such low densities. We also report the first observation of persistent positive photoconductivity in a two-dimensional hole gas. An analysis of the number density and temperature dependence of the mobility leads us to conclude that the mobility is limited by phonon scattering above approximately 4 K and interface scattering at lower temperatures. (C) 1994 American Institute of Physics.

引用

页码：2054 / 2056

页数：3

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