Depth resolution function of the laser assisted tomographic atom probe in the investigation of semiconductors

被引：70

作者：

Cadel, Emmanuel ^{[1
]}

Vurpillot, Francois ^{[1
]}

Larde, Rodrigue ^{[1
]}

Duguay, Sebastien ^{[1
]}

Deconihout, Bernard ^{[1
]}

机构：

[1] Univ Rouen, Grp Phys Mat, CNRS, UMR 6634, F-76801 St Etienne De Rouvray, France

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 04期

关键词：

FIELD EVAPORATION; SPECIMEN PREPARATION; SILICON; RECONSTRUCTIONS;

D O I：

10.1063/1.3186617

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

The investigation of boron delta layers by tomographic atom probe (3DAP) is used to demonstrate that a depth profiling resolution of 0.9 nm (full width at half maximum) can be achieved. Results are compared with measurements provided by secondary ion mass spectrometry. The steepness is found to be below 1 nm/decade. In addition, silicon atomic planes are resolved in the real space demonstrating an in-depth spatial resolution of the 3DAP below 0.2 nm. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3186617]

引用

收藏

页数：6

相关论文

共 32 条

[1]

Ultra-low energy SIMS analysis of boron deltas in silicon [J].

Baboux, N ;

Dupuy, JC ;

Prudon, G ;

Holliger, P ;

Laugier, F ;

Papon, AM ;

Hartmann, JM .

JOURNAL OF CRYSTAL GROWTH, 2002, 245 (1-2) :1-8

[2]

Bhushan B., 2007, SPRINGER HDB NANOTEC

[3]

Atomic-scale investigation of grain boundary segregation in Astroloy with a three dimensional atom-probe [J].

Blavette, D ;

Letellier, L ;

Duval, P ;

Guttmann, M .

INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, PT 1, 1996, 207- :79-91

[4]

Laser-assisted atom probe tomography and nanosciences [J].

Blavette, Didier ;

Al Kassab, Talaat ;

Cadel, Emanuel ;

Mackel, Alexander ;

Vurpillot, Francois ;

Gilbert, Mathieu ;

Cojocaru, Oana ;

Deconihout, Bernard .

INTERNATIONAL JOURNAL OF MATERIALS RESEARCH, 2008, 99 (05) :454-460

[5]

CEREZO D, 1996, J PHYS IV, V6, pC5

[6]

Effects of annealing on local composition and electrical transport correlations in MgO-based magnetic tunnel junctions [J].

Chiaramonti, A. N. ;

Schreiber, D. K. ;

Egelhoff, W. F. ;

Seidman, David N. ;

Petford-Long, A. K. .

APPLIED PHYSICS LETTERS, 2008, 93 (10)

[7]

INVESTIGATION OF SOME SELECTED METALLURGICAL PROBLEMS WITH THE TOMOGRAPHIC ATOM-PROBE [J].

DECONIHOUT, B ;

BOSTEL, A ;

BAS, P ;

CHAMBRELAND, S ;

LETELLIER, L ;

DANOIX, F ;

BLAVETTE, D .

APPLIED SURFACE SCIENCE, 1994, 76 (1-4) :145-154

[8]

Design of a femtosecond laser assisted tomographic atom probe [J].

Gault, B ;

Vurpillot, F ;

Vella, A ;

Gilbert, M ;

Menand, A ;

Blavette, D ;

Deconihout, B .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2006, 77 (04)

[9]

Estimation of the reconstruction parameters for atom probe tomography [J].

Gault, Baptiste ;

de Geuser, Frederic ;

Stephenson, Leigh T. ;

Moody, Michael P. ;

Muddle, Barrington C. ;

Ringer, Simon P. .

MICROSCOPY AND MICROANALYSIS, 2008, 14 (04) :296-305

[10]

Spatial distribution maps for atom probe tomography [J].

Geiser, Brian P. ;

Kelly, Thomas F. ;

Larson, David J. ;

Schneir, Jason ;

Roberts, Jay P. .

MICROSCOPY AND MICROANALYSIS, 2007, 13 (06) :437-447

← 1 2 3 4 →