High performance thin-film flip-chip InGaN-GaN light-emitting diodes

被引:297
作者
Shchekin, O. B. [1 ]
Epler, J. E. [1 ]
Trottier, T. A. [1 ]
Margalith, T. [1 ]
Steigerwald, D. A. [1 ]
Holcomb, M. O. [1 ]
Martin, P. S. [1 ]
Krames, M. R. [1 ]
机构
[1] Philips Lumileds Lighting Co, San Jose, CA 95131 USA
关键词
D O I
10.1063/1.2337007
中图分类号
O59 [应用物理学];
学科分类号
摘要
Data are presented on the operation of thin-film flip-chip InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs). The combination of thin-film LED concept with flip-chip technology is shown to provide surface brightness and flux output advantages over conventional flip-chip and vertical-injection thin-film LEDs. Performance characteristics of blue, white, and green thin-film flip-chip 1x1 mm(2) LEDs are described. Blue (similar to 441 nm) thin-film flip-chip LEDs are demonstrated with radiance of 191 mW/mm(2) sr at 1 A drive, more than two times brighter than conventional flip-chip LEDs. An encapsulated thin-film flip-chip blue LED lamp is shown to have external quantum efficiency of 38% at forward current of 350 mA. A white lamp based on a YAG:Ce phosphor coated device exhibits luminous efficacy of 60 lm/W at 350 mA with peak efficiency of 96 lm/W at 20 mA and luminance of 38 Mcd/m(2) at 1 A drive current. Green (similar to 517 nm) devices exhibit luminance of 37 Mcd/m(2) at 1 A. (c) 2006 American Institute of Physics.
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页数:3
相关论文
共 16 条
[1]   P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].
AMANO, H ;
KITO, M ;
HIRAMATSU, K ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114
[2]   High efficiency GaN-based LEDs and lasers on SiC [J].
Edmond, J ;
Abare, A ;
Bergman, M ;
Bharathan, J ;
Bunker, KL ;
Emerson, D ;
Haberern, K ;
Ibbetson, J ;
Leung, M ;
Russel, P ;
Slater, D .
JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) :242-250
[3]   Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].
Fujii, T ;
Gao, Y ;
Sharma, R ;
Hu, EL ;
DenBaars, SP ;
Nakamura, S .
APPLIED PHYSICS LETTERS, 2004, 84 (06) :855-857
[4]  
HAERLE V, 2006, P SOC PHOTO-OPT INS, V6134, P133
[5]   GEOMETRICAL PROPERTIES OF RANDOM PARTICLES AND EXTRACTION OF PHOTONS FROM ELECTROLUMINESCENT DIODES [J].
JOYCE, WB ;
BACHRACH, RZ ;
DIXON, RW ;
SEALER, DA .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (05) :2229-2253
[6]   Optical patterning of GaN films [J].
Kelly, MK ;
Ambacher, O ;
Dahlheimer, B ;
Groos, G ;
Dimitrov, R ;
Angerer, H ;
Stutzmann, M .
APPLIED PHYSICS LETTERS, 1996, 69 (12) :1749-1751
[7]  
MARGALITH T, 2006, P SPIE, V6134
[8]   Room-temperature photoenhanced wet etching of GaN [J].
Minsky, MS ;
White, M ;
Hu, EL .
APPLIED PHYSICS LETTERS, 1996, 68 (11) :1531-1533
[9]   Watt-class high-output-power 365 nm ultraviolet light-emitting diodes [J].
Morita, D ;
Yamamoto, M ;
Akaishi, K ;
Matoba, K ;
Yasutomo, K ;
Kasai, Y ;
Sano, M ;
Nagahama, S ;
Mukai, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (9A) :5945-5950
[10]   HIGH-POWER GAN P-N-JUNCTION BLUE-LIGHT-EMITTING DIODES [J].
NAKAMURA, S ;
MUKAI, T ;
SENOH, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (12A) :L1998-L2001