Intense violet-blue photoluminescence in as-deposited amorphous Si:H:O films

被引：51

作者：

Tong, S

Liu, XN

Gao, T

Bao, XM

机构：

[1] Nanjing Univ, Nanjing

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 05期

关键词：

D O I：

10.1063/1.119833

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Three photoluminescence (PL) bands at 340-370, 400-430, and 740 nm were observed at roam temperature in a-Si:H:O films fabricated by plasma enhanced chemical vapor deposition without any postprocessing The violet-blue emission is very strong and stable, and its intensity is closely related to the oxygen content in the films, which can be controlled by the applied de biases on the sample substrates during deposition. The first two PL peaks are ascribed to Si-O related species, and the last one to the quantum size effect of the nanocrystallites embedded in the rt-Si:H:O matrix. (C) 1997 American Institute of Physics.

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页码：698 / 700

页数：3

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