Anion exchange at the interfaces of mixed anion III-V heterostructures grown by molecular beam epitaxy

被引：18

作者：

Brown, T ^{[1
]}

Brown, A ^{[1
]}

May, G ^{[1
]}

机构：

[1] Georgia Inst Technol, Atlanta, GA 30332 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 04期

关键词：

D O I：

10.1116/1.1491988

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-resolution x-ray diffraction was used to characterize and compare the exchange process at the interfaces of mixed anion heterostructures. Superlattices (SLs) formed by the Sb-2 exposure of As-stabilized GaAs surfaces and the As-4 exposure of Sb-stabilized GaSb surfaces were grown by molecular beam epitaxy and characterized.. Interface composition profiles have been determined using full dynamical simulations of the SL structures that exhibited anion exchange. Comparisons between As-for-Sb exchange on GaSb and Sb-for-As exchange on GaAs are presented in order to better understand the chemical and physical processes that lead to anion exchange. (C) 2002 American Vacuum Society.

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页码：1771 / 1776

页数：6

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