Conduction processes in conjugated, highly regio-regular, high molecular mass, poly(3-hexylthiophene) thin-film transistors

Highly regio-regular poly(3-hexylthiophenes) (P3HT) thin films have been produced using the Tzrnadel method. They have head to tail counts approaching very close to 100% and high molecular mass. Thin-film transistors and Schottky diodes have been used to study the effects of counter ion and carrier density on field-effect and bulk mobility, respectively. The density of counter ions was increased using 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ) and had a profound effect on both the field effect and bulk mobility with a ratio between the two of 10(2), in a similar way to DDQ in poly(beta'-dodecyloxy-alpha,alpha',-alpha',alpha'terthienyl) (polyDOT(3)), but with substantially higher drift mobilities. A method is described, using Schottky barriers, of simply and accurately determining carrier drift mobility. The effect of carrier density on hole mobility is believed to be indirect, filling traps in the regions separating the highly ordered domains until trap free conduction and hence high mobility is reached. (C) 2002 American Institute of Physics.