In situ substrate preparation for high-quality SiC chemical vapour deposition

被引：116

作者：

Hallin, C ^{[1
]}

Owman, F ^{[1
]}

Martensson, P ^{[1
]}

Ellison, A ^{[1
]}

Konstantinov, A ^{[1
]}

Kordina, O ^{[1
]}

Janzen, E ^{[1
]}

机构：

[1] ABB CORP RES,S-72178 VASTERAS,SWEDEN

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 181卷 / 03期

基金：

瑞典研究理事会;

关键词：

D O I：

10.1016/S0022-0248(97)00247-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In situ preparation of 4H and 6H silicon carbide substrate surfaces in hydrogen and hydrogen-propane etching systems has been studied. The etching of on-axis (0001) 6H-SiC substrates resulted in regular straight terraces and one unit high steps. The etching of on-axis (0001) 4H-SiC substrates resulted in broad terraces interrupted by large step formations. The 4H- and 6H-SiC (0001) off-axis substrates (3.5 degrees towards (11 (2) over bar 0) yield smooth etched surfaces with the exception of stripe-like defects on the 4H polytype which are shown to be related to stacking-faults. The stacking faults are suggested to be a cause for step-bunching and surface roughening. Hydrogen-etching prior to growth has been shown to improve the epitaxial layer quality both concerning defect formation and step-bunching.

引用

页码：241 / 253

页数：13

共 31 条

[11] STEP BUNCHING IN CHEMICAL-VAPOR-DEPOSITION OF 6H-SIC AND 4H-SIC ON VICINAL SIC(0001) FACES [J].