Role of the MOCVD deposition conditions on physico-chemical properties of tetragonal ZrO2 thin films

被引：16

作者：

Galicka-Fau, K. ^{[1
]}

Legros, C. ^{[1
]}

Andrieux, M. ^{[1
]}

Brunet, M. ^{[2
]}

Szade, J. ^{[3
]}

Garry, G. ^{[4
]}

机构：

[1] Univ Paris 11, CNRS, UMR 8182, LEMHE ICMMO, F-91405 Orsay, France

[2] Univ Toulouse, LAAS, CNRS, F-31077 Toulouse, France

[3] Silesian Univ, August Chelkowski Inst Phys, PL-40007 Katowice, Poland

[4] THALES Res & Technol France, F-91767 Palaiseau, France

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 22期

关键词：

DLI-MOCVD; ZrO2; Tetragonal and monoclinic phases; 3D; High aspect ratio pores; CHEMICAL-VAPOR-DEPOSITION; PHASE; SILICON;

D O I：

10.1016/j.apsusc.2009.06.067

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High-k ZrO2 thin films suitable for microelectronics applications were deposited by DLI-MOCVD method on planar Si (1 0 0) and pores etched in Si (1 0 0). The effects of various experimental parameters such as temperature of substrates, injection frequency, concentration of the precursor and oxygen partial pressure in the reactive chamber, were investigated in order to produce a single tetragonal ZrO2 phase which exhibits, according to the literature, the best permittivity. Taking into account the crystal structure, microstructure and chemistry of the films, the expected phase was successfully deposited for high temperature of substrates, relatively high feeding rate and low oxygen partial pressure. Although the 3D coverage is actually not perfect in high aspect ratio pores, the electric properties of this sample are very promising with permittivity up to 27. Published by Elsevier B.V.

引用

页码：8986 / 8994

页数：9

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