Room temperature photocurrent spectroscopy of single zincblende and wurtzite InP nanowires

被引：48

作者：

Maharjan, A. ^{[1
]}

Pemasiri, K. ^{[1
]}

Kumar, P. ^{[1
]}

Wade, A. ^{[1
]}

Smith, L. M. ^{[1
]}

Jackson, H. E. ^{[1
]}

Yarrison-Rice, J. M. ^{[2
]}

Kogan, A. ^{[1
]}

Paiman, S. ^{[3
]}

Gao, Q. ^{[3
]}

Tan, H. H. ^{[3
]}

Jagadish, C. ^{[3
]}

机构：

[1] Univ Cincinnati, Dept Phys, Cincinnati, OH 45221 USA

[2] Miami Univ, Dept Phys, Oxford, OH 45056 USA

[3] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys & Engn, Canberra, ACT 0200, Australia

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 19期

基金：

美国国家科学基金会; 澳大利亚研究理事会;

关键词：

III-V semiconductors; indium compounds; nanowires; photoconductivity; photolithography; Schottky barriers; SUPERLATTICES;

D O I：

10.1063/1.3138137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Simple photolithographic techniques are used to fabricate single InP nanowire devices with back-to-back Schottky barriers. Direct imaging of the photoresponse shows that the active regions of the device are spatially localized near the reverse-biased Schottky barrier. By tuning the laser excitation energy from below to well above the energy gap, photocurrent spectroscopy can illuminate the zincblende or wurtzite nature of the nanowire device even at room temperature.

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页数：3

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