Hypersonic characterization of sound propagation velocity in AlxGa1-xN thin films

被引：24

作者：

Riobóo, RJJ

Rodríguez-Cañas, E

Vila, M

Prieto, C

Calle, F

Palacios, T

Sánchez, MA

Omnès, F

Ambacher, O

Assouar, B

Elmazria, O

机构：

[1] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain

[2] Univ Politecn Madrid, ETSI Telecomunicac, Inst Sistemas Optoelect & Microtecnol, E-28040 Madrid, Spain

[3] Univ Politecn Madrid, ETSI Telecomunicac, Dept Ingn Elect, E-28040 Madrid, Spain

[4] CNRS, CRHEA, F-06560 Valbonne, France

[5] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[6] Univ Nancy 1, Lab Phys Milieux Ionises & Applicat, CNRS, UMR 7040, F-54506 Vandoeuvre Les Nancy, France

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 11期

关键词：

D O I：

10.1063/1.1517728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sound propagation velocity of surface acoustic waves (SAWs) and bulk acoustic waves (BAWs) has been investigated by means of high resolution Brillouin spectroscopy. The results show a linear dependence of the BAW propagation velocity with the Al concentration. There is no relevant influence of the substrate chosen in the propagation velocity of BAWs in AlxGa1-xN thin films. SAW propagation velocity of epitaxially grown AlN is clearly lower than the observed one in AlN prepared by reactive dc magnetron sputtering. Numerical simulation results of SAW propagation velocity are compared with the experimental results. (C) 2002 American Institute of Physics.

引用

页码：6868 / 6874

页数：7

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[21] Nanotechnology for SAW devices on AlN epilayers [J].