Current-induced magnetization switching in MgO barrier based magnetic tunnel junctions with CoFeB/Ru/CoFeB synthetic ferrimagnetic free layer

被引：125

作者：

Hayakawa, Jun

Ikeda, Shoji

Lee, Young Min

Sasaki, Ryutaro

Meguro, Toshiyasu

Matsukura, Fumihiro

Takahashi, Hiromasa

Ohno, Hideo

机构：

[1] Hitachi Ltd, Adv Res Lab, Kokubunji, Tokyo 1858601, Japan

[2] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 37-41期

关键词：

current-induced magnetization switching; synthetic free layer; magnetic tunnel junction; MgO barrier; CoFeB;

D O I：

10.1143/JJAP.45.L1057

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the intrinsic critical current density (J(c0)) in current-induced magnetization switching and the thermal stability factor (E/k(B)T, where E, k(B), and T are the energy potential, the Boltzmann constant, and temperature, respectively) in MgO based magnetic tunnel junctions with a Co40Fe40B20(2 nm)/Ru(0.7-2.4 nm)/Co40Fe40B20(2 nm) synthetic ferrimagnetic (SyF) free layer. We show that J(c0) and E/k(B)T can be determined by analyzing the average critical current density as a function of coercivity using the Slonczewski's model taking into account thermal fluctuation. We find that high antiferromagnetic coupling between the two CoFeB layers in a SyF free layer results in reduced J(c0) without reducing high E/k(B)T.

引用

收藏

页码：L1057 / L1060

页数：4

相关论文

共 22 条

[1] Emission of spin waves by a magnetic multilayer traversed by a current [J].

Berger, L .

PHYSICAL REVIEW B, 1996, 54 (13) :9353-9358

[2] OSCILLATORY INTERLAYER EXCHANGE COUPLING IN CO/RU MULTILAYERS AND BILAYERS [J].

BLOEMEN, PJH ;

VANKESTEREN, HW ;

SWAGTEN, HJM ;

DEJONGE, WJM .

PHYSICAL REVIEW B, 1994, 50 (18) :13505-13514

[3] Spin transfer switching and spin polarization in magnetic tunnel junctions with MgO and AlOx barriers -: art. no. 232502 [J].

Diao, Z ;

Apalkov, D ;

Pakala, M ;

Ding, YF ;

Panchula, A ;

Huai, YM .

APPLIED PHYSICS LETTERS, 2005, 87 (23) :1-3

[4] 230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions [J].

Djayaprawira, DD ;

Tsunekawa, K ;

Nagai, M ;

Maehara, H ;

Yamagata, S ;

Watanabe, N ;

Yuasa, S ;

Suzuki, Y ;

Ando, K .

APPLIED PHYSICS LETTERS, 2005, 86 (09) :1-3

[5] Current-perpendicular-to-plane-magnetoresistance properties of Ru and Co/Ru interfaces [J].

Eid, K ;

Fonck, R ;

Darwish, MA ;

Pratt, WP ;

Bass, J .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (10) :8102-8104

[6]

FERT A, CONDMAT0310737

[7] Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions [J].

Hayakawa, J ;

Ikeda, S ;

Lee, YM ;

Sasaki, R ;

Meguro, T ;

Matsukura, F ;

Takahashi, H ;

Ohno, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (37-41) :L1267-L1270

[8] Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering [J].

Ikeda, S ;

Hayakawa, J ;

Lee, YM ;

Sasaki, R ;

Meguro, T ;

Matsukura, F ;

Ohno, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (46-49) :L1442-L1445

[9] Magnetic switching field and giant magnetoresistance effect of multilayers with synthetic antiferromagnet free layers [J].

Inomata, K ;

Nozaki, T ;

Tezuka, N ;

Sugimoto, S .

APPLIED PHYSICS LETTERS, 2002, 81 (02) :310-312

[10] Substantial reduction of critical current for magnetization switching in an exchange-biased spin valve [J].

Jiang, Y ;

Nozaki, T ;

Abe, S ;

Ochiai, T ;

Hirohata, A ;

Tezuka, N ;

Inomata, K .

NATURE MATERIALS, 2004, 3 (06) :361-364