Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions

被引：176

作者：

Hayakawa, J

Ikeda, S

Lee, YM

Sasaki, R

Meguro, T

Matsukura, F

Takahashi, H

Ohno, H

机构：

[1] Hitachi Ltd, Adv Res Lab, Tokyo 1858601, Japan

[2] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 37-41期

关键词：

current-driven magnetization switching; magnetic tunnel junction; MgO barrier; CoFeB;

D O I：

10.1143/JJAP.44.L1267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Current-driven magnetization switching in low-resistance Co40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities J(c) requited for current-driven switching in samples annealed at 270 and 300 degrees C are found to be as low as 7.8 x 10(5) and 8.8 x 10(5) A/cm(2) with accompanying tunnel magnetoresistance (TMR) ratios of 49 and 73%, respectively. Further annealing of the samples at 350 degrees C increases TMR ratio to 160%, while accompanying J(c) increases to 2.5 x 10(6) A/cm(2). We attribute the low J(c) to the high spin-polarization of tunnel current and small MsV Product of the CoFeB single free layer, where M-s is the saturation magnetization and V the volume of the free layer.

引用

收藏

页码：L1267 / L1270

页数：4

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