Preferential orientation of titanium dioxide polycrystalline films using atmospheric CVD technique

被引:36
作者
Tanaka, N
Ohshio, S
Saitoh, H
机构
[1] Department of Chemistry, Nagaoka University of Technology, Nagaoka-shi, Niigata 940-21, 1603-1, Kamitamioka-cho
关键词
atmospheric CVD; titanium dioxide polycrystalline films; rapid deposition; preferential orientation; columnar crystals; PBC; growth kinetics; growth mechanism;
D O I
10.2109/jcersj.105.551
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Crystalline orientation and growth rate of titanium dioxide polycrystalline films deposited using an air-opened chemical vapor deposition apparatus were investigated. The deposition rate of the titanium dioxide films depends on the substrate temperature and the vaporizing temperature of titanium tetra-isopropoxide, X-ray diffraction analysis revealed that the growth orientation of the films was mainly varied With the vaporizing temperature, At relatively low vaporizing temperature, the films were consisted of [001]-oriented columnar crystals grown at a minimum deposition rate of 4 nm/s, In contrast, [100]- and [211]-oriented crystallites grew with a maximum deposition rate of 45 nm/s at relatively high vaporizing temperature, These results suggest that the concentration of reactant, which is strongly dependent upon the vaporizing temperature, is one of factors which decide the growth rate of each crystal face.
引用
收藏
页码:551 / 554
页数:4
相关论文
共 9 条
[1]  
Bradley D.C., 1978, METAL ALKOXIDES
[2]   FUNDAMENTALS OF CHEMICAL VAPOR-DEPOSITION [J].
BRYANT, WA .
JOURNAL OF MATERIALS SCIENCE, 1977, 12 (07) :1285-1306
[3]   ULTRAHIGH-VACUUM METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH AND IN-SITU CHARACTERIZATION OF EPITAXIAL TIO2 FILMS [J].
CHEN, S ;
MASON, MG ;
GYSLING, HJ ;
PAZPUJALT, GR ;
BLANTON, TN ;
CASTRO, T ;
CHEN, KM ;
FICTORIE, CP ;
GLADFELTER, WL ;
FRANCIOSI, A ;
COHEN, PI ;
EVANS, JF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (05) :2419-2429
[4]  
Hartman P., 1973, Crystal Growth: an Introduction
[5]  
HOLMAN WR, CVD 1, V2, P127
[6]   RAPID FORMATION OF ZINC-OXIDE FILMS BY AN ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION METHOD [J].
KAMATA, K ;
NISHINO, J ;
OHSHIO, S ;
MARUYAMA, K ;
OHTUKI, M .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (02) :505-508
[7]   PREPARATION OF ALUMINUM-DOPED ZINC-OXIDE FILMS BY A NORMAL-PRESSURE CVD METHOD [J].
NISHINO, J ;
OHSHIO, S ;
KAMATA, K .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1992, 75 (12) :3469-3472
[8]   SOL-GEL FABRICATION OF EPITAXIAL AND ORIENTED TIO2 THIN-FILMS [J].
SELVARAJ, U ;
PRASADARAO, AV ;
KOMARNENI, S ;
ROY, R .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1992, 75 (05) :1167-1170
[9]  
SHIMOGAKI Y, 1987, YOGYO-KYOKAI-SHI, V95, P80