Recovery and drift dynamics of resistance and threshold voltages in phase-change memories

被引：183

作者：

Ielmini, Daniele ^{[1
]}

Lacaita, Andrea L. ^{[1
]}

Mantegazza, Davide ^{[1
]}

机构：

[1] Politecn Milan, Dipartimento Elettron & Informat, I-20133 Milan, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 02期

关键词：

chalcogenide materials; nonvolatile memories; phase-change memories (PCMs); threshold switching;

D O I：

10.1109/TED.2006.888752

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electronic behavior of the chalcogenide material used in phase-change memory (PCM) plays a key role in defining the operation voltages and times of the memory cell. In particular, the threshold voltage for electronic switching of the amorphous chalcogenide determines the boundary between programming and readout operation, while its resistance allows the recognition of the bit status. This paper present a time-resolved analysis of threshold voltage and resistance in a PCM. Both dynamics of threshold voltage and resistance display a fast transient, named recovery behavior, in the first 30 ns after programming. A: slower, nonsaturating drift transient is found for longer times. The two transients are discussed referring to electronic and structural rearrangements in the amorphous chalcogenide. Finally, the impact on the device level is considered.

引用

页码：308 / 315

页数：8

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