High breakdown voltage AlGaN-GaNHEMTs achieved by multiple field plates

被引：298

作者：

Xing, HL ^{[1
]}

Dora, Y ^{[1
]}

Chini, A ^{[1
]}

Heikman, S ^{[1
]}

Keller, S ^{[1
]}

Mishra, UK ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 04期

关键词：

breakdown voltage; field-effect transistors (FETs); field plates; high-electron mobility transistors (HEMTs); passivation power electronics;

D O I：

10.1109/LED.2004.824845

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-voltage Al0.22Ga0.78N-GaN high-electron mobility transistors have been fabricated using multiple field plates over dielectric passivation layers. The device breakdown voltage was found to increase with the addition of the field plates. with two field plates, the device showed, a breakdown voltage as high as 900 V. This technique is easy to apply, based on the standard planar transistor fabrication, and especially attractive for the power switching applications.

引用

页码：161 / 163

页数：3

共 19 条

[1]

ASANO K, 1909, IEDM TECH DIG, P59

[2] THE ROLE OF THE DEVICE SURFACE IN THE HIGH-VOLTAGE BEHAVIOR OF THE GAAS-MESFET [J].

BARTON, TM ;

LADBROOKE, PH .

SOLID-STATE ELECTRONICS, 1986, 29 (08) :807-813

[3] HIGH-BREAKDOWN-VOLTAGE MESFET WITH A LOW-TEMPERATURE-GROWN GAAS PASSIVATION LAYER AND OVERLAPPING GATE STRUCTURE [J].

CHEN, CL ;

MAHONEY, LJ ;

MANFRA, MJ ;

SMITH, FW ;

TEMME, DH ;

CALAWA, AR .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (06) :335-337

[4] 12W/mm power density AlGaN/GaN HEMTs on sapphire substrate [J].

Chini, A ;

Buttari, D ;

Coffie, R ;

Heikman, S ;

Keller, S ;

Mishra, UK .

ELECTRONICS LETTERS, 2004, 40 (01) :73-74

[5] Power and linearity characteristics of GaN MISFETs on sapphire substrate [J].

Chini, A ;

Wittich, J ;

Heikman, S ;

Keller, S ;

DenBaars, SP ;

Mishra, UK .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (02) :55-57

[6]

CHINI A, 2004, IN PRESS IEEE ELECT

[7] The toughest transistor yet [J].

Eastman, LF ;

Mishra, UK .

IEEE SPECTRUM, 2002, 39 (05) :28-+

[8] POWER-LIMITING BREAKDOWN EFFECTS IN GAAS-MESFET [J].

FRENSLEY, WR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :962-970

[9] AN ALGAAS/INGAAS PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR WITH IMPROVED BREAKDOWN VOLTAGE FOR X-BAND AND KU-BAND POWER APPLICATIONS [J].

HUANG, JC ;

JACKSON, GS ;

SHANFIELD, S ;

PLATZKER, A ;

SALEDAS, PK ;

WEICHERT, C .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1993, 41 (05) :752-759

[10] Very high voltage AlGaN/GaN high electron mobility transistors using a field plate deposited on a stepped insulator [J].

Karmalkar, S ;

Mishra, UK .

SOLID-STATE ELECTRONICS, 2001, 45 (09) :1645-1652

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