Room-temperature optically pumped laser emission from a-plane GaN with high optical gain characteristics

被引：13

作者：

Kuokstis, E ^{[1
]}

Chen, CQ

Yang, JW

Shatalov, M

Gaevski, ME

Adivarahan, V

Khan, MA

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[2] Vilnius State Univ, Dept Semicond Phys, LT-2040 Vilnius, Lithuania

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 16期

关键词：

D O I：

10.1063/1.1711169

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence (PL) and optical gain (OG) spectra of a-plane GaN layers have been analyzed over a wide range of excitation intensities. The samples were fully coalesced layers grown by metalorganic chemical vapor deposition over r-plane sapphire substrates using epitaxial layer overgrowth (ELOG) and selective area lateral epitaxy (SALE) procedures. ELOG and SALE a-plane samples showed a strong stimulated emission line in backscattering-geometry PL spectra along with extremely high OG coefficient values (in SALE samples more than 2000 cm(-1)). Structures prepared with natural cleaved facet cavities based on these films were used to demonstrate optically pumped room-temperature lasing. (C) 2004 American Institute of Physics.

引用

页码：2998 / 3000

页数：3

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