Many-body and disorder effects in the optical spectra of extremely high density Be delta-doped GaAs

被引：11

作者：

Fritze, M ^{[1
]}

Kastalsky, A ^{[1
]}

Cunningham, JE ^{[1
]}

Knox, WH ^{[1
]}

Pathak, RN ^{[1
]}

Perakis, IE ^{[1
]}

机构：

[1] RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08855

来源：

SOLID STATE COMMUNICATIONS | 1996年 / 100卷 / 07期

关键词：

quantum wells; semiconductors; optical properties; order-disorder effects;

D O I：

10.1016/0038-1098(96)00437-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We study the highly degenerate hole gas found in extremely high density Be delta-doped GaAs (n(s) approximate to 10(14) cm(-2)). Sharp excitonic-like features (Fermi-edge singularities), dominate the luminescence spectrum at low temperatures and remarkably coexist with a high degree of disorder evidenced by large, temperature independent Urbach tails and low mobilities. This observation coincides with a transition to self-organized clustered Be growth and the population of additional hole subbands. Copyright (C) 1996 Published by Elsevier Science Ltd

引用

页码：497 / 501

页数：5

共 25 条

[1] EXCITONIC ENHANCEMENT OF THE FERMI-EDGE SINGULARITY IN A DENSE 2-DIMENSIONAL ELECTRON-GAS [J].

CHEN, W ;

FRITZE, M ;

WALECKI, W ;

NURMIKKO, AV ;

ACKLEY, D ;

HONG, JM ;

CHANG, LL .

PHYSICAL REVIEW B, 1992, 45 (15) :8464-8477

[2] DISORDER AND THE OPTICAL-ABSORPTION EDGE OF HYDROGENATED AMORPHOUS-SILICON [J].

CODY, GD ;

TIEDJE, T ;

ABELES, B ;

BROOKS, B ;

GOLDSTEIN, Y .

PHYSICAL REVIEW LETTERS, 1981, 47 (20) :1480-1483

[3] DIMERIZATION INDUCED BE SEGREGATION IN GAAS [J].

CUNNINGHAM, JE ;

GOOSSEN, KW ;

CHIU, TH ;

WILLIAMS, MD ;

JAN, W ;

STORZ, F .

APPLIED PHYSICS LETTERS, 1993, 62 (11) :1236-1238

[4]

DAMEN TC, 1995, APPL PHYS LETT, V67, P525

[5] VISIBLE PHOTOLUMINESCENCE FROM N-DOT ENSEMBLES AND THE LINEWIDTH OF ULTRASMALL ALYIN1-YAS ALXGA1-XAS QUANTUM DOTS [J].

FAFARD, S ;

LEON, R ;

LEONARD, D ;

MERZ, JL ;

PETROFF, PM .

PHYSICAL REVIEW B, 1994, 50 (11) :8086-8089

[6] RADIATIVE RECOMBINATION OF HOLES IN DELTA-P-DOPED GALLIUM-ARSENIDE [J].

GILINSKY, AM ;

ZHURAVLEV, KS ;

LUBYSHEV, DI ;

MIGAL, VP ;

PREOBRAZHENSKII, VV ;

SEMIAGIN, BR .

SUPERLATTICES AND MICROSTRUCTURES, 1991, 10 (04) :399-402

[7] LOW-TEMPERATURE ELECTRON-MOBILITY IN A DELTA-DOPED SEMICONDUCTOR [J].

GONZALEZ, LR ;

KRUPSKI, J ;

SZWACKA, T .

PHYSICAL REVIEW B, 1994, 49 (16) :11111-11116

[8] RADIATIVE TRANSITIONS ASSOCIATED WITH HOLE CONFINEMENT AT SI DELTA-DOPED PLANES IN GAAS [J].

KE, ML ;

RIMMER, JS ;

HAMILTON, B ;

EVANS, JH ;

MISSOUS, M ;

SINGER, KE ;

ZALM, P .

PHYSICAL REVIEW B, 1992, 45 (24) :14114-14121

[9] ELECTRONIC-STRUCTURE OF DELTA-DOPED QUANTUM-WELLS [J].

KE, ML ;

HAMILTON, B .

PHYSICAL REVIEW B, 1993, 47 (08) :4790-4793

[10] FORMATION OF SUBBANDS IN DELTA-DOPED SEMICONDUCTORS [J].

KORTUS, J ;

MONECKE, J .

PHYSICAL REVIEW B, 1994, 49 (24) :17216-17223

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