Antireflection effect of self-organized GaN nanotip structure from ultraviolet to visible region

A self-organized GaN nanotip structure was fabricated by means of reactive ion etching using Cl-2 plasma. We have revealed. in Fourier transform analysis, that the self-organized nanotip structure has a two-dimensional isotropic distribution and broadhand structure frequencies of the nanotips with the most frequent spatial frequency Of 10.4 mum(-1). It has been found that the nanotip surface, which is a fine structure with periods smaller than the wavelength of light, provides antireflection and enhanced transmission effects from the ultraviolet to the visible region (330 nm-800 nm). These excellent antireflection performances of the GaN nanotip structure are of interest for optoelectronic applications in GaN-based devices.