The Structure and Properties of Amorphous Indium Oxide

被引:200
作者
Buchholz, D. Bruce [1 ]
Ma, Qing [2 ]
Alducin, Diego [3 ]
Ponce, Arturo [3 ]
Jose-Yacaman, Miguel [3 ]
Khanal, Rabi [4 ]
Medvedeva, Julia E. [4 ]
Chang, Robert P. H. [1 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[2] Argonne Natl Lab, Adv Photon Source, Northwestern Synchrotron Res Ctr, DND CAT, Argonne, IL 60439 USA
[3] Univ Texas San Antonio, Dept Phys & Astron, San Antonio, TX 78249 USA
[4] Missouri Univ Sci & Technol, Dept Phys, Rolla, MO 65409 USA
基金
美国国家科学基金会;
关键词
INITIO MOLECULAR-DYNAMICS; THIN-FILMS; ZN;
D O I
10.1021/cm502689x
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A series of In2O3 thin films, ranging from X-ray diffraction amorphous to highly crystalline, were grown on amorphous silica substrates using pulsed laser deposition by varying the film growth temperature. The amorphous-tocrystalline transition and the structure of amorphous In2O3 were investigated by grazing angle X-ray diffraction (GIXRD), Hall transport measurement, high resolution transmission electron microscopy (HRTEM), electron diffraction, extended X-ray absorption fine structure (EXAFS), and ab initio molecular dynamics (MD) liquid-quench simulation. On the basis of excellent agreement between the EXAFS and MD results, a model of the amorphous oxide structure as a network of InOx polyhedra was constructed. Mechanisms for the transport properties observed in the crystalline, amorphous-to-crystalline, and amorphous deposition regions are presented, highlighting a unique structure-property relationship.
引用
收藏
页码:5401 / 5411
页数:11
相关论文
共 43 条
[1]   Characterization of amorphous In2O3: An ab initio molecular dynamics study [J].
Aliano, Antonio ;
Catellani, Alessandra ;
Cicero, Giancarlo .
APPLIED PHYSICS LETTERS, 2011, 99 (21)
[2]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS INDIUM OXIDE [J].
BELLINGHAM, JR ;
PHILLIPS, WA ;
ADKINS, CJ .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (28) :6207-6221
[3]   Electrical and band-gap properties of amorphous zinc-indium-tin oxide thin films [J].
Buchholz, D. B. ;
Proffit, D. E. ;
Wisser, M. D. ;
Mason, T. O. ;
Chang, R. P. H. .
PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL, 2012, 22 (01) :1-6
[4]   Differences between amorphous indium oxide thin films [J].
Buchholz, D. Bruce ;
Zeng, Li ;
Bedzyk, Michael J. ;
Chang, Robert P. H. .
PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL, 2013, 23 (05) :475-480
[5]   Control and Characterization of the Structural, Electrical, and Optical Properties of Amorphous Zinc-Indium-Tin Oxide Thin Films [J].
Buchholz, D. Bruce ;
Liu, Jun ;
Marks, Tobin J. ;
Zhang, Ming ;
Chang, Robert P. H. .
ACS APPLIED MATERIALS & INTERFACES, 2009, 1 (10) :2147-2153
[6]   A modified transparent conducting oxide for flat panel displays only [J].
Chae, GS .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (3A) :1282-1286
[7]   Structural, elastic, vibrational and electronic properties of amorphous Al2O3 from ab initio calculations [J].
Davis, Sergio ;
Gutierrez, Gonzalo .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 23 (49)
[8]   Electronic origin of the conductivity imbalance between covalent and ionic amorphous semiconductors [J].
Deng, Hui-Xiong ;
Wei, Su-Huai ;
Li, Shu-Shen ;
Li, Jingbo ;
Walsh, Aron .
PHYSICAL REVIEW B, 2013, 87 (12)
[9]   Transparent conducting oxides for photovoltaics [J].
Fortunato, Elvira ;
Ginley, David ;
Hosono, Hideo ;
Paine, David C. .
MRS BULLETIN, 2007, 32 (03) :242-247
[10]   Chemical and thin-film strategies for new transparent conducting oxides [J].
Freeman, AJ ;
Poeppelmeier, KR ;
Mason, TO ;
Chang, RPH ;
Marks, TJ .
MRS BULLETIN, 2000, 25 (08) :45-51