Solution processed invisible all-oxide thin film transistors

被引：86

作者：

Song, Keunkyu ^{[1
]}

Kim, Dongjo ^{[1
]}

Li, Xiang-Shu ^{[2
]}

Jun, Taewhan ^{[1
]}

Jeong, Youngmin ^{[1
]}

Moon, Jooho ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[2] Samsung Adv Inst Technol, Analyt Engn Ctr, Suwon 440600, South Korea

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2009年 / 19卷 / 46期

关键词：

INDIUM-OXIDE; ZINC; SEMICONDUCTOR;

D O I：

10.1039/b912554j

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on a fully transparent solution processed thin-film transistor (TFT) device with oxide semiconductor and oxide electrode. Selective doping into the sol-gel derived ZnO materials tailors the electrical properties to range from metallic to semiconducting characteristics. Integration of a spin-coated zinc tin oxide (ZTO) semiconductor with an ink-jet-printed zinc indium oxide (ZIO) electrode creates a transparent TFT with high performance and good transparency (similar to 90%). Use of the same ZnO-based oxide materials in a TFT allows for the formation of good electrical contacts characterized by low contact resistance, comparable to those with a vacuum-deposited Al electrode. Our results suggest that the solution-processed ZnO-based TFT has great potential to work as a building block for future printed transparent electronics.

引用

页码：8881 / 8886

页数：6

共 23 条

[1] Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide [J].

Barquinha, P. ;

Pimentel, A. ;

Marques, A. ;

Pereira, L. ;

Martins, R. ;

Fortunato, E. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) :1749-1752

[2] Solution-derived textured oxide thin films - a review [J].

Bhuiyan, MS ;

Paranthaman, M ;

Salama, K .

SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 2006, 19 (02) :R1-R21

[3] Structure and dielectric properties of HfO2 films prepared by a sol-gel route [J].

Blanchin, M. -G. ;

Canut, B. ;

Lambert, Y. ;

Teodorescu, V. S. ;

Barau, A. ;

Zaharescu, M. .

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2008, 47 (02) :165-172

[4] Preparation and optical properties of colloidal, monodisperse, and highly crystalline ITO nanoparticles [J].

Choi, Sang-Il ;

Nam, Ki Min ;

Park, Bo Keun ;

Seo, Won Seok ;

Park, Joon T. .

CHEMISTRY OF MATERIALS, 2008, 20 (08) :2609-2611

[5] Recent advances in ZnO transparent thin film transistors [J].

Fortunato, E ;

Barquinha, P ;

Pimentel, A ;

Gonçalves, A ;

Marques, A ;

Pereira, L ;

Martins, R .

THIN SOLID FILMS, 2005, 487 (1-2) :205-211

[6] Electron traps and hysteresis in pentacene-based organic thin-film transistors [J].

Gu, G ;

Kane, MG ;

Doty, JE ;

Firester, AH .

APPLIED PHYSICS LETTERS, 2005, 87 (24) :1-3

[7] Solution-processed zinc tin oxide semiconductor for thin-film transistors [J].

Jeong, Sunho ;

Jeong, Youngmin ;

Moon, Jooho .

JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (30) :11082-11085

[8] Heterogeneous interfacial properties of ink-jet-printed silver nanoparticulate electrode and organic semiconductor [J].

Kim, Dongjo ;

Jeong, Sunho ;

Shin, Hyunjuang ;

Xia, Younan ;

Moon, Jooho .

ADVANCED MATERIALS, 2008, 20 (16) :3084-3089

[9] Direct writing of silver conductive patterns: Improvement of film morphology and conductance by controlling solvent compositions [J].

Kim, Dongjo ;

Jeong, Sunho ;

Park, Bong Kyun ;

Moon, Jooho .

APPLIED PHYSICS LETTERS, 2006, 89 (26)

[10] A general route to printable high-mobility transparent amorphous oxide semiconductors [J].

Lee, Doo-Hyoung ;

Chang, Yu-Jen ;

Herman, Gregory S. ;

Chang, Chih-Hung .

ADVANCED MATERIALS, 2007, 19 (06) :843-+

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