RTA and stoichiometry effect on the thermochromism of VO2 thin films

被引：67

作者：

Lee, MH

Kim, MG

机构：

[1] Dept. of Electron. Mat. Engineering, University of Suwon, Suwon, Suwon 440-600

来源：

THIN SOLID FILMS | 1996年 / 286卷 / 1-2期

关键词：

annealing; physical vapour deposition (PVD); rutherford backscattering spectroscopy; vanadium oxide;

D O I：

10.1016/S0040-6090(96)08536-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

VOx thin films were fabricated by the reactive e-beam evaporation method. By varying oxygen pressure during reactive e-beam evaporation, the stoichiometry of vanadium dioxide thin film was changed. The oxygen pressure of 5 x 10(-5) Torr was found to be an optimum pressure to fabricate perfect stoichiometric VO2 thin film. Any deviation from perfect stoichiometry tended to degrade the thermochromic effect of the film. Rapid thermal annealing (RTA) was successfully adopted to crystallize the VO2 thin films. An RTA temperature of 400 degrees C similar to 450 degrees C and an RTA time of 30 s were found to provide the optimum conditions for the VO2 thin film to exhibit a distinct thermochromism.

引用

页码：219 / 222

页数：4

共 17 条

[1] THERMOCHROMIC VO2 FILMS FOR ENERGY-EFFICIENT WINDOWS [J].