A simplified collisional model of sputtering in the linear cascade regime

被引:19
作者
Mahan, JE [1 ]
Vantomme, A [1 ]
机构
[1] KATHOLIEKE UNIV LEUVEN,INST KERN STRALINGSFYS,B-3001 LOUVAIN,BELGIUM
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1997年 / 15卷 / 04期
关键词
D O I
10.1116/1.580668
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Thin film deposition by sputtering is usually performed with projectile-energy-target combinations placing the sputtering mechanism within the linear cascade regime of collisional sputtering. For the purposes of estimating sputter yield values, as well as conveying an understanding of this most important sputtering mechanism, there is a need for an analytical model whose yield expression has a clear and obvious physical meaning, is easy to evaluate with a modest computer, and yet faithfully represents sputtering in this regime. To meet this need, a deliberately simplified model is developed. The yield expression is a product of three terms: the number of recoiling target atoms at the practical endpoint of the cascade, times the probability that they are sufficiently near the surface to escape, and times the probability that they are traveling in the right direction. It is evaluated by calculating (1) the surface binding energy from thermodynamic data, (2) an average energy of the population of target recoils, from their energy distribution at the practical endpoint of a single collision cascade, and (3) an escape probability from the projected ranges of projectile and recoils, based on nuclear energy loss theory. The simplified collisional model reproduces trends in experimental data for the projectile energy-, projectile mass-, and target-dependences of sputter yield. (C) 1997 American Vacuum Society.
引用
收藏
页码:1976 / 1989
页数:14
相关论文
共 30 条
[1]   SELF-ION SPUTTERING YIELDS FOR COPPER, NICKEL, AND ALUMINUM [J].
ALLAS, RG ;
KNUDSON, AR ;
LAMBERT, JM ;
TREADO, PA ;
REYNOLDS, GW .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 194 (1-3) :615-619
[2]   SPUTTERING EXPERIMENTS IN THE HIGH ENERGY REGION [J].
ALMEN, O ;
BRUCE, G .
NUCLEAR INSTRUMENTS & METHODS, 1961, 11 (02) :279-289
[3]  
Andersen H. H., 1981, Sputtering by particle bombardment I. Physical sputtering of single-element solids, P145
[4]   HEAVY-ION SPUTTERING YIELD OF SILICON [J].
ANDERSEN, HH ;
BAY, HL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :1919-1921
[5]  
Ashcroft N.W., 1976, Solid state physics Holt, Rinehart and Winston, Vfirst
[6]  
BIRD JR, 1989, ION BEAMS MAT ANAL, pCH14
[7]   AN ANALYTICAL FORMULA AND IMPORTANT PARAMETERS FOR LOW-ENERGY ION SPUTTERING [J].
BOHDANSKY, J ;
ROTH, J ;
BAY, HL .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2861-2865
[8]  
FALCONE G, 1987, NUCL INSTRUM METH B, V18, P399
[9]  
FELDMAN LC, 1992, FUNDAMENTLS SURFACE
[10]   SPUTTERING MODELS - A SYNOPTIC VIEW [J].
HARRISON, DE .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 70 (1-4) :1-64