Structural properties of the diamond nucleation layer on iridium analyzed by laterally resolved X-ray absorption spectroscopy

被引：8

作者：

Bernhard, Pasqual

Ziethen, Christian

Schoenhense, Gerd

Schreck, Matthias ^{[1
]}

Bauer, Thomas

Gsell, Stefan

Stritzker, Bernd

机构：

[1] Univ Mainz, Inst Phys, D-55099 Mainz, Germany

[2] Univ Augsburg, Inst Phys, D-86135 Augsburg, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 33-36期

关键词：

diamond; heteroepitaxy; iridium; chemical vapor deposition; nucleation; X-ray absorption near edge structure; photoemission electron microscopy; synchrotron radiation;

D O I：

10.1143/JJAP.45.L984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The complex structure of the diamond nucleation layer on iridium has been studied by X-ray absorption near edge structure (XANES) in combination with X-ray photoemission electron microscopy (X-PEEM). In contrast to all other substrate materials, on iridium the diamond nuclei formed by the bias enhanced nucleation (BEN) procedure gather in islands ("domains") with micron-size lateral dimensions. Laterally resolved XANES spectra of the carbon-K absorption edge clearly show the difference in carbon bonding structure Outside and inside the domain area. A positive feedback mechanism for the nucleation and lateral crystal growth, are two alternative concepts which can explain the domain formation.

引用

页码：L984 / L986

页数：3

共 15 条

[1] Analysis of the total carbon deposition during the bias enhanced nucleation of diamond on Ir/SrTiO3 (001) using 13C-methane [J].

Bauer, T ;

Schreck, M ;

Hörmann, F ;

Bergmaier, A ;

Dollinger, G ;

Stritzker, B .

[2] STRUCTURAL STUDIES OF ARGON-SPUTTERED AMORPHOUS-CARBON FILMS BY MEANS OF EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE [J].

COMELLI, G ;

STOHR, J ;

ROBINSON, CJ ;

JARK, W .

PHYSICAL REVIEW B, 1988, 38 (11) :7511-7519

[3] X-ray absorption spectroscopy and atomic force microscopy study of bias-enhanced nucleation of diamond films [J].

Garcia, MM ;

Jimenez, I ;

Vazquez, L ;

Gomez-Aleixandre, C ;

Albella, JM ;

Sanchez, O ;

Terminello, LJ ;

Himpsel, FJ .

APPLIED PHYSICS LETTERS, 1998, 72 (17) :2105-2107

[4] Diamond heteroepitaxy: pattern formation and mechanisms [J].

Golding, B ;

Bednarski-Meinke, C ;

Dai, Z .

[5] Nanosize diamond formation promoted by direct current glow discharge process: Synchrotron radiation and high resolution electron microscopy studies [J].

Gouzman, I ;

Hoffman, A ;

Comtet, G ;

Hellner, L ;

Dujardin, G ;

Petravic, M .

APPLIED PHYSICS LETTERS, 1998, 72 (20) :2517-2519

[6] Ultrathick, low-stress nanostructured diamond films -: art. no. 221914 [J].

Kucheyev, SO ;

Biener, J ;

Tringe, JW ;

Wang, YM ;

Mirkarimi, PB ;

van Buuren, T ;

Baker, SL ;

Hamza, AV ;

Brühne, K ;

Fecht, HJ .

APPLIED PHYSICS LETTERS, 2005, 86 (22) :1-3

[7] The mechanism of diamond nucleation from energetic species [J].

Lifshitz, Y ;

Köhler, T ;

Frauenheim, T ;

Guzmann, I ;

Hoffman, A ;

Zhang, RQ ;

Zhou, XT ;

Lee, ST .

SCIENCE, 2002, 297 (5586) :1531-1533

[8] Epitaxial growth of diamond on iridium [J].

Ohtsuka, K ;

Suzuki, K ;

Sawabe, A ;

Inuzuka, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (8B) :L1072-L1074

[9] Diamond/Ir/SrTiO3:: A material combination for improved heteroepitaxial diamond films [J].

Schreck, M ;

Roll, H ;

Stritzker, B .

APPLIED PHYSICS LETTERS, 1999, 74 (05) :650-652

[10] Domain formation in diamond nucleation on iridium [J].

Schreck, M ;

Bauer, T ;

Gsell, S ;

Hörmann, F ;

Bielefeldt, H ;

Stritzker, B .

← 1 2 →