Molecular-beam epitaxy of self-assembled InAs quantum dots on non-(100) oriented GaAs

被引：13

作者：

GonzalezBorrero, PP

Marega, E

Lubyshev, DI

Petitprez, E

Basmaji, P

机构：

[1] Inst. de Fis. de São Carlos, Universidade de São Paulo, 13960-970 São Carlos, SP

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

基金：

巴西圣保罗研究基金会;

关键词：

quantum dots; self-assembled; high-index; MBE;

D O I：

10.1016/S0022-0248(96)01182-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper we report optical properties of InAs quantum dots (QD) grown by molecular-beam epitaxy on GaAs (211)A, (n11)A/B, where n is 1, 5 and 7, and on reference (001) substrates. The photoluminescence (PL) spectra reveal differences in amplitude, integral luminescence, peak position and shape. Temperature dependence indicates an additional lateral confinement on (001), (n11)B, (211)A and (111)A substrates. Our results also show an enhancement of QD onset thermal quenching energy by a factor of similar to 3 for these orientations, when compared with the reference quantum well. PL polarization measurements show strong in-plane dependence caused by the quantum dot's structural anisotropy. However, the structure grown on (5 1 1)A and (711)A surfaces does not exhibit QD formation.

引用

页码：765 / 770

页数：6

共 17 条

[1] EXCITONS IN QUANTUM BOXES - CORRELATION-EFFECTS AND QUANTUM CONFINEMENT [J].