Solution-Prepared Hybrid-Nanoparticle Dielectrics for High-Performance Low-Voltage Thin-Film Transistors

被引：24

作者：

Gan, Ye ^{[1
]}

Cai, Qin Jia ^{[1
]}

Li, Chang Ming ^{[1
]}

Bin Yang, Hong ^{[1
]}

Lu, Zhi Song ^{[1
]}

Gong, Cheng ^{[1
]}

Chan-Park, Mary B. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Chem & Biomed Engn, Singapore 637459, Singapore

来源：

ACS APPLIED MATERIALS & INTERFACES | 2009年 / 1卷 / 10期

关键词：

solution-processed; dielectrics; organic thin-film transistors; pentacene; trapped-state density; FIELD-EFFECT TRANSISTORS; GATE DIELECTRICS; BARIUM-TITANATE; HIGH-MOBILITY; LOGIC GATES; FABRICATION; INSULATORS; LAYER; ACID;

D O I：

10.1021/am9003914

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Oleic acid capped barium strontium titanate (OA-BST) nanoparticles were synthesized for solution-prepared dielectrics in organic thin-film transistors (OTFTs) The as-synthesized nanoparticles were well-dispersed in organic solvents to deposit very homogeneous dielectric films by direct spin coating Bottom-gate pentacene TFTs fabricated using these nanoparticle dielectric films showed high mobilities of 1-2 cm(2) V-1 s(-1) with on/off ratios of 10(3) under a low driven voltage of -2 5 V Top-gate poly(3,3"'didodecylquaterthiophene) (PQT-12) TFTs with nanoparticle dielectrics also exhibited a low-voltage operation (-5 V) performance with mobilities of 001-01 cm(2) V-1 s(-1) and on/off ratios of 10(3)-10(4) Detailed studies on the gate voltage-dependent mobility of the devices showed that only a low gate electric held needed to achieve the saturated mobility for the OA-BST-based pentacene OTFTs could be attributed to the low trapped-state densities (<39 x 10(11) cm(-2)) at the dielectric/semiconductor interfaces for these devices

引用

页码：2230 / 2236

页数：7

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