Scaling of bulk pMOSFETs: (110) Surface orientation versus uniaxial compressive stress

被引：16

作者：

Bufler, F. M. ^{[1
]}

Tsibizov, A.

Erlebach, A.

机构：

[1] ETH, Inst Integrierte Syst, CH-8050 Zurich, Switzerland

[2] Synopsys Schweiz GmbH, CH-8050 Zurich, Switzerland

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 12期

关键词：

enhanced mobility; Monte Carlo device simulation; PMOS; strained silicon; (110) surface;

D O I：

10.1109/LED.2006.886706

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Six-band k (.) p Monte Carlo device simulation is used to estimate the drain current enhancements in (110) surface and in uniaxially compressively stressed bulk pMOSFETs for gate lengths down to 30 nm. Satisfactory agreement is found with measured long-channel mobility enhancements as a function of the channel direction for (110) surface orientation or as a function of stress. It turns out that the stress-induced current improvement becomes larger than for the unstrained-Si (110) surface orientation at stress levels above 1 GPa. Specifically, for a gate length of 45 nm, the on-current enhancement is 50% for 1.5 GPa compared to 35% for the favorable <-110 > channel direction in a (110) pMOSFET.

引用

页码：992 / 994

页数：3

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