Comparison of charge yield in MOS devices for different radiation sources

被引：93

作者：

Paillet, P ^{[1
]}

Schwank, JR

Shaneyfelt, MR

Ferlet-Cavrois, V

Jones, RL

Flament, O

Blackmore, EW

机构：

[1] CEA, DIF, F-91680 Bruyeres Le Chatel, France

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] TRIUMF, Vancouver, BC V6T 2A3, Canada

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2002年 / 49卷 / 06期

关键词：

charge yield; initial recombination; ionizing radiation; metal oxide semiconductor; MOS; total dose; transistors;

D O I：

10.1109/TNS.2002.805438

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

NMOS transistors were irradiated using X-ray, Co-60 gamma, electron, and proton radiation sources. The charge yield was, estimated for protons of different energies and electrons and compared to values obtained for X-ray and Co-60 irradiations.

引用

页码：2656 / 2661

页数：6

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