A Semianalytical Model of Bilayer-Graphene Field-Effect Transistor

被引：46

作者：

Cheli, Martina ^{[1
]}

Fiori, Gianluca ^{[1
]}

Iannaccone, Giuseppe ^{[1
]}

机构：

[1] Univ Pisa, Dipartimento Ingn Informaz, I-56100 Pisa, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 12期

关键词：

Analytical model; band-to-band tunneling; field-effect transistors (FETs); graphene bilayer;

D O I：

10.1109/TED.2009.2033419

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bilayer graphene has the very interesting property of an energy gap tunable with the vertical electric field. We propose an analytical model for a bilayer-graphene field-effect transistor, suitable for exploring the design parameter space in order to design a device structure with promising performance in terms of transistor operation. Our model, based on the effective mass approximation and ballistic transport assumptions, takes into account bilayer-graphene tunable gap and self-polarization and includes all band-to-band tunneling current components, which are shown to represent the major limitation to transistor operation, because the achievable energy gap is not sufficient to obtain a large I-on/I-off ratio.

引用

页码：2979 / 2986

页数：8

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