Modeling of disorder influenced Auger recombination in strained-layer type-II superlattices

被引:5
作者
Grein, CH
Ehrenreich, H
机构
[1] Univ Illinois, Dept Phys MC 273, Chicago, IL 60607 USA
[2] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA
关键词
D O I
10.1063/1.1532941
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effects of disorder on Auger recombination lifetimes in strained-layer type-II superlattices are estimated. Disorder is modeled in two ways: (i) by completely neglecting momentum conservation in Auger transitions, and (ii) by including phonon scattering in the transitions. The purpose of (i) is to obtain establish bounds on the effects of disorder, and of (ii) to provide more realistic lifetime estimates for high-quality materials. In both cases, the disorder is assumed to be less severe than what would cause significant changes in the electronic band structure. The complete relaxation of momentum conservation results in Auger lifetimes decreasing by approximately one order of magnitude. However, electron-phonon effects have a relatively small effect because the interaction is weak. Hence, the benefits of band engineering in such superlattices remain substantial even in the presence of typical disorder. (C) 2003 American Institute of Physics.
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页码:1075 / 1078
页数:4
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