Interfacial characteristic of (Ba,Sr)TiO3 thin films deposited on different bottom electrodes

被引:6
作者
Wang, Jinzhao [1 ]
Zhang, Tianjin [1 ]
Zhang, Baishun [1 ]
Jiang, Juan [1 ]
Pan, Ruikun [1 ]
Ma, Zhijun [1 ]
机构
[1] Hubei Univ, Fac Mat Sci & Engn, Wuhan 430062, Peoples R China
关键词
DIELECTRIC-PROPERTIES; DEAD-LAYER; ELECTRICAL-PROPERTIES; SR)TIO3 CAPACITORS; THICKNESS; (BA; TUNABILITY; DEPENDENCE; DESIGN;
D O I
10.1007/s10854-009-9853-z
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Barium strontium titanate (Ba1-x Sr (x) )TiO3 (BST) thin films were deposited on Pt, Ru, RuO2, and Pt/RuO2 electrodes by radio frequency magnetron sputtering. The interfacial structure characteristic of the BST films deposited on various electrodes was investigated. X-ray photoelectron spectroscopy investigations showed that the interfacial diffusion layer in BST/Pt and BST/Ru are approximately 6 and 10 nm, respectively. The BST films are short of Ba and O elements comparing with the stoichiometry Ba0.65Sr0.35TiO3 in the interface region. Dielectric measurement of the BST films with thickness ranging from 70 to 400 nm revealed that the BST films deposited on Pt and Pt/RuO2 bottom electrodes have similar dielectric property, the BST films deposited on Ru have the highest bulk dielectric constant, and the thickness dependence of dielectric constant on the BST film deposited on RuO2 electrode can be neglected. The interfacial layer dielectric constant of BST films deposited on Pt and Ru electrodes are estimated to be about 34.5 and 157.1, respectively. The effect of interfacial dead-layer on the dielectric constant could be eliminated through selecting appropriate bottom electrodes.
引用
收藏
页码:1208 / 1213
页数:6
相关论文
共 24 条
[1]   A study of current transport in (BaxSr1-x)Ti1+yO3+z thin-film capacitors containing a voltage-dependent interface state charge distribution -: art. no. 114101 [J].
Baniecki, JD ;
Shioga, T ;
Kurihara, K ;
Kamehara, N .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (11)
[2]   Size effects on thin film ferroelectrics: Experiments on isolated single crystal sheets [J].
Chang, L. W. ;
McMillen, M. ;
Morrison, F. D. ;
Scott, J. F. ;
Gregg, J. M. .
APPLIED PHYSICS LETTERS, 2008, 93 (13)
[3]   Leakage current of Pt/(Ba0.7Sr0.3)TiO3 interface with dead layer -: art. no. 024106 [J].
Chen, B ;
Yang, H ;
Miao, J ;
Zhao, L ;
Cao, LX ;
Xu, B ;
Qiu, XG ;
Zhao, BR .
JOURNAL OF APPLIED PHYSICS, 2005, 97 (02)
[4]   Thickness and dielectric constant of dead layer in Pt/(Ba0.7Sr0.3)TiO3/YBa2Cu3O7-x capacitor [J].
Chen, B ;
Yang, H ;
Zhao, L ;
Miao, J ;
Xu, B ;
Qiu, XG ;
Zhao, BR ;
Qi, XY ;
Duan, XF .
APPLIED PHYSICS LETTERS, 2004, 84 (04) :583-585
[5]   Evaluation of tailored electrode (Ba,Sr)RuO3 for (Ba,Sr)TiO3 [J].
Choi, DK ;
Kim, BS ;
Son, SY ;
Oh, SH ;
Park, KW .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (06) :3347-3351
[6]   Bottom electrode dependence of the properties of (Ba,Sr)TiO3 thin film capacitors [J].
Choi, YC ;
Lee, BS .
MATERIALS CHEMISTRY AND PHYSICS, 1999, 61 (02) :124-129
[7]   Low dielectric loss and enhanced tunability of Ba0.6Sr0.4TiO3 based thin films via material compositional design and optimized film processing methods [J].
Cole, MW ;
Nothwang, WD ;
Hubbard, C ;
Ngo, E ;
Ervin, M .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (11) :9218-9225
[8]   Planar microwave integrated phase-shifter design with high purity ferroelectric material [J].
DeFlaviis, F ;
Alexopoulos, NG ;
Stafsudd, OM .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1997, 45 (06) :963-969
[9]   Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs [J].
Ezhilvalavan, S ;
Tseng, TY .
MATERIALS CHEMISTRY AND PHYSICS, 2000, 65 (03) :227-248
[10]   Depletion layer thickness and Schottky type carrier injection at the interface between Pt electrodes and (Ba, Sr)TiO3 thin films [J].
Hwang, CS ;
Lee, BT ;
Kang, CS ;
Lee, KH ;
Cho, HJ ;
Hideki, H ;
Kim, WD ;
Lee, SI ;
Lee, MY .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) :287-295