A study of current transport in (BaxSr1-x)Ti1+yO3+z thin-film capacitors containing a voltage-dependent interface state charge distribution -: art. no. 114101

J-V-T characteristics, measured over a very wide temperature (50-441 K) range, are analyzed simultaneously with C-V measurements to investigate conduction mechanisms and the state of charge of Pt/BaxSr1-xTi1+yO3+z(BST)/Pt thin-film capacitors during an applied voltage or current stress. A time- and voltage-dependent state of charge of the Pt/BST/Pt capacitors is inferred from stress-induced voltage shifts in the C-V curves. The voltage and temperature dependence of the C-V curve shifts is shown to be consistent with a voltage-dependent charge in interface states resulting from a change in potential across interfacial dipole layers. An intimate contact Schottky barrier model incorporating a voltage-dependent charge in interface states at both cathode and anode contacts is used to investigate conduction mechanisms in Pt/BST/Pt thin-film capacitors. The basic transport mechanisms of drift-diffusion, thermionic field emission, and Fowler-Nordeim tunneling are shown to dominate leakage in limiting voltage and temperature regimes. Thermionic emission is not predicted to control current flow at any investigated voltage and temperature. (C) 2005 American Institute of Physics.