CHARGE TRAPPING GENERATION AND RELIABILITY FOR HIGH-PERFORMANCE TANTALUM OXIDE CAPACITORS

被引：6

作者：

BYEON, SG

TZENG, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 10期

关键词：

D O I：

10.1063/1.343799

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4837 / 4842

页数：6

共 15 条

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