Effect of ion damage on the electrical and optical behavior of p-type GaAs and InGaP

被引：5

作者：

Lee, KN ^{[1
]}

Lee, JW ^{[1
]}

Hong, J ^{[1
]}

Abernathy, CR ^{[1
]}

Pearton, SJ ^{[1
]}

Hobson, WS ^{[1
]}

机构：

[1] AT&T BELL LABS,LUCENT TECHNOL,MURRAY HILL,NJ 07924

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1997年 / 26卷 / 11期

基金：

美国国家科学基金会;

关键词：

annealing; electron cyclotron resonance (ECR) plasma; electrical and optical behavior; ion damage; p-GaAs; photoluminescence (PL); p-InGaP;

D O I：

10.1007/s11664-997-0070-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of ion damage generated by exposure to argon or hydrogen electron cyclotron resonance plasmas at various conditions was investigated for p-InGaP and p-GaAs. Room temperature photoluminescence (PL) and either capacitance-voltage or Hall measurements were performed to determine the effect of these various treatments on the efficiency of band edge recombination and the electrical compensation. The feasibility of damage removal was investigated by examining the electrical and optical behavior after annealing at various temperatures. For argon plasma exposed InGaP, restoration of the PL intensity to similar to 30% of as-grown sample could be achieved at modest annealing temperatures of similar to 600 degrees C. For hydrogen plasma exposed carbon doped GaAs, on the other hand, almost 80 similar to 90% of the PL intensity of the as-grown sample could be recovered at 600 degrees C. For heavily C-doped GaAs(p degrees 10(21)cm(-3)), there was significant degradation of the optical properties at annealing temperatures greater than or equal to 600 degrees C.

引用

页码：1279 / 1282

页数：4

共 11 条

[1] ULTRAHIGH DOPING OF GAAS BY CARBON DURING METALORGANIC MOLECULAR-BEAM EPITAXY [J].