The effect of UV ozone treatment on poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)

被引：25

作者：

Helander, M. G. ^{[1
]}

Wang, Z. B. ^{[1
]}

Greiner, M. T. ^{[1
]}

Liu, Z. W. ^{[1
]}

Lian, K. ^{[1
]}

Lu, Z. H. ^{[1
]}

机构：

[1] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 17期

基金：

加拿大自然科学与工程研究理事会;

关键词：

PHOTOELECTRON-SPECTROSCOPY; SURFACE STATES; THIN-FILMS; CONDUCTIVITY; PSS;

D O I：

10.1063/1.3257382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interface between ultraviolet (UV) ozone treated poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and N,N'-diphenyl-N,N'-bis-(1-naphthyl)-1-1'-biphenyl-4,4'-diamine (alpha-NPD) was investigated using single carrier hole-only devices and in situ ultraviolet and x-ray photoelectron spectroscopy to elucidate the implications for device applications. It is found that although the work function of PEDOT: PSS is increased by UV ozone treatment, the injection barrier to alpha-NPD is in fact increased, resulting in lower current density in devices. The apparent increase in work function is attributed to a metastable surface dipole as a result of UV ozone treatment, which does not significantly influence the energy-level alignment. (C) 2009 American Institute of Physics. [doi:10.1063/1.3257382]

引用

页数：3

共 27 条

[21]

Seah MP, 2001, SURF INTERFACE ANAL, V31, P721, DOI 10.1002/sia.1076

[22]

Sze SM., 2021, PHYS SEMICONDUCTOR D

[23] ORGANIC ELECTROLUMINESCENT DIODES [J].

TANG, CW ;

VANSLYKE, SA .

APPLIED PHYSICS LETTERS, 1987, 51 (12) :913-915

[24] Ultraviolet light-ozone treatment of poly(3,4-ethylenedioxy-thiophene)-based materials resulting in increased work functions [J].

Tengstedt, Carl ;

Kanciurzewska, Anna ;

de Jong, Michel P. ;

Braun, Slawomir ;

Salaneck, William R. ;

Fahlman, Mats .

THIN SOLID FILMS, 2006, 515 (04) :2085-2090

[25] Interfacial electronic structure of a hybrid organic-inorganic optical upconverter device: The role of interface states [J].

Tsai, K. Y. F. ;

Helander, M. G. ;

Lu, Z. H. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (08)

[26] Abnormal charge injection behavior at metal-organic interfaces [J].

Wang, Z. B. ;

Helander, M. G. ;

Tsang, S. W. ;

Lu, Z. H. .

PHYSICAL REVIEW B, 2008, 78 (19)

[27] Surface electronic structure of plasma-treated indium tin oxides [J].

Yu, HY ;

Feng, XD ;

Grozea, D ;

Lu, ZH ;

Sodhi, RNS ;

Hor, AM ;

Aziz, H .

APPLIED PHYSICS LETTERS, 2001, 78 (17) :2595-2597

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