Surface electronic structure of plasma-treated indium tin oxides

被引:201
作者
Yu, HY [1 ]
Feng, XD
Grozea, D
Lu, ZH
Sodhi, RNS
Hor, AM
Aziz, H
机构
[1] Univ Toronto, Dept Mat Sci & Engn, Toronto, ON M5S 3E4, Canada
[2] Univ Toronto, Inst Biomat Sci & Biomed Engn, Toronto, ON M5S 3E4, Canada
[3] Xerox Res Ctr Canada Ltd, Mississauga, ON L5K 2L1, Canada
关键词
D O I
10.1063/1.1367897
中图分类号
O59 [应用物理学];
学科分类号
摘要
X-ray photoelectron spectroscopy (XPS) has been used to study the electronic structures of indium tin oxide (ITO) surfaces treated by O+, Ar+, and NHx+ plasmas. The XPS data show that there is a significant change in core level energies (In 3d(5/2) O 1s, and Sn 3d(5/2)), in donor concentration (Sn4+), in valence band maximums (VBM), and in work functions on ITO surfaces being treated by O+ and NHx+ plasmas, compared with that of virgin and Ar+ plasma treated surfaces. Based on these experimental data, a surface band-bending theory is proposed. The theory explains that when Fermi energy of the plasma-treated surface is shifted towards the middle of the band gap: core levels will shift their energies to lower binding energies, VBM will bend upward, and work function will increase, as observed. (C) 2001 American Institute of Physics.
引用
收藏
页码:2595 / 2597
页数:3
相关论文
共 14 条
[1]   Work function of ITO substrates and band-offsets at the TPD/ITO interface determined by photoelectron spectroscopy [J].
Chkoda, L ;
Heske, C ;
Sokolowski, M ;
Umbach, E ;
Steuber, F ;
Staudigel, J ;
Stössel, M ;
Simmerer, J .
SYNTHETIC METALS, 2000, 111 :315-319
[2]   PROPERTIES OF SN-DOPED IN2O3 FILMS PREPARED BY RF SPUTTERING [J].
FAN, JCC ;
BACHNER, FJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) :1719-1725
[3]  
HAMBERG I, 1986, J APPL PHYS, V60, P123
[4]   Improvement of organic electroluminescent device performance by in situ plasma treatment of indium-tin-oxide surface [J].
Ishii, M ;
Mori, T ;
Fujikawa, H ;
Tokito, S ;
Taga, Y .
JOURNAL OF LUMINESCENCE, 2000, 87-9 (87) :1165-1167
[5]   A study of the ITO-on-PPV interface using photoelectron spectroscopy [J].
Johansson, N ;
Cacialli, F ;
Xing, KZ ;
Beamson, G ;
Clark, DT ;
Friend, RH ;
Salaneck, WR .
SYNTHETIC METALS, 1998, 92 (03) :207-211
[6]   Indium-tin oxide treatments for single- and double-layer polymeric light-emitting diodes: The relation between the anode physical, chemical, and morphological properties and the device performance [J].
Kim, JS ;
Granstrom, M ;
Friend, RH ;
Johansson, N ;
Salaneck, WR ;
Daik, R ;
Feast, WJ ;
Cacialli, F .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (12) :6859-6870
[7]   Characterization of treated indium-tin-oxide surfaces used in electroluminescent devices [J].
Mason, MG ;
Hung, LS ;
Tang, CW ;
Lee, ST ;
Wong, KW ;
Wang, M .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) :1688-1692
[8]   Surface oxidation activates indium tin oxide for hole injection [J].
Milliron, DJ ;
Hill, IG ;
Shen, C ;
Kahn, A ;
Schwartz, J .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :572-576
[9]   Work function of indium tin oxide transparent conductor measured by photoelectron spectroscopy [J].
Park, Y ;
Choong, V ;
Gao, Y ;
Hsieh, BR ;
Tang, CW .
APPLIED PHYSICS LETTERS, 1996, 68 (19) :2699-2701
[10]   CARRIER TUNNELING AND DEVICE CHARACTERISTICS IN POLYMER LIGHT-EMITTING-DIODES [J].
PARKER, ID .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) :1656-1666