Introduction to silicon on insulator materials and devices

被引:18
作者
Cristoloveanu, S
机构
[1] Lab. Phys. Composants S., ENSERG, 38016 Grenoble Cedex 1
关键词
D O I
10.1016/S0167-9317(97)00172-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
From a theoretical viewpoint, Silicon On Insulator (SOI) is the most attractive technology for low-voltage ULSI circuits. A strict condition for competing effectively with bulk silicon is the understanding of material properties, fabrication techniques, and device operation. This paper reviews the main advantages of SOI devices, the various technological approaches, the more or less exotic family of SOI devices and the special mechanisms involved in the operation of thin SOI MOSFETs.
引用
收藏
页码:145 / 154
页数:10
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