Time-resolved optical characterization of InAs/InGaAs quantum dots emitting at 1.3 μm

被引：88

作者：

Fiore, A ^{[1
]}

Borri, P

Langbein, W

Hvam, JM

Oesterle, U

Houdré, R

Stanley, RP

Ilegems, M

机构：

[1] Ecole Polytech Fed Lausanne, Inst Microoptoelect, CH-1015 Lausanne, Switzerland

[2] Tech Univ Denmark, Res Res COM, DK-2800 Lyngby, Denmark

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 23期

关键词：

D O I：

10.1063/1.126668

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the rime-resolved optical characterization of InAs/InGaAs self-assembled quantum dots emitting at 1.3 mu m at room temperature. The photoluminescence decay time varies from 1.2 (5 K) to 1.8 ns (293 K). Evidence of thermalization among dots is seen in both continuous-wave and time-resolved spectra around 150 K. A short rise time of 10+/-2 ps is measured. indicating a fast capture and relaxation of carriers inside the dots. (C) 2000 American Institute of Physics. [S0003-6951(00)05123-8].

引用

页码：3430 / 3432

页数：3

共 24 条

[11] SELF-FORMED IN0.5GA0.5AS QUANTUM DOTS ON GAAS SUBSTRATES EMITTING AT 1.3 MU-M
MUKAI, K
OHTSUKA, N
SUGAWARA, M
YAMAZAKI, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (12A): : L1710 - L1712
[12] 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA
Mukai, K
Nakata, Y
Otsubo, K
Sugawara, M
Yokoyama, N
Ishikawa, H
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (10) : 1205 - 1207
[13] A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates
Nishi, K
Saito, H
Sugou, S
Lee, JS
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (08) : 1111 - 1113
[14] Rapid carrier relaxation in self-assembled InxGa1-xAs/GaAs quantum dots
Ohnesorge, B
Albrecht, M
Oshinowo, J
Forchel, A
Arakawa, Y
[J]. PHYSICAL REVIEW B, 1996, 54 (16): : 11532 - 11538
[15] Patane A, 1997, PHYS STATUS SOLIDI A, V164, P493, DOI 10.1002/1521-396X(199711)164:1<493::AID-PSSA493>3.0.CO
[16] 2-D
[17] Thermal effects in quantum dot lasers
Patanè, A
Polimeni, A
Henini, M
Eaves, L
Main, PC
Hill, G
[J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (01) : 625 - 627
[18] SHERNYAKOV YM, 1999, ELECT LETT, V35
[19] Lasing characteristics of self-formed quantum-dot lasers with multistacked dot layer
Shoji, H
Nakata, Y
Mukai, K
Sugiyama, Y
Sugawara, M
Yokoyama, N
Ishikawa, H
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (02) : 188 - 195
[20] Electronic and optical properties of strained quantum dots modeled by 8-band k•p theory
Stier, O
Grundmann, M
Bimberg, D
[J]. PHYSICAL REVIEW B, 1999, 59 (08) : 5688 - 5701

← 1 2 3 →