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Gallium sulfide thin film grown on GaAs(100) by microwave glow discharge

被引：19
作者：
Chen, XY
Hou, XY
Cao, XA
Ding, XM
Chen, LY
Zhao, GQ
Wang, X
机构：
[1] FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA
[2] FUDAN UNIV,SEMICOND PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA
[3] FUDAN UNIV,DEPT PHYS NUCL,SHANGHAI 200433,PEOPLES R CHINA
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 173卷 / 1-2期
关键词：
D O I：
10.1016/S0022-0248(96)00808-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A novel sulfur passivation of GaAs surface has been developed by using the microwave sulfur glow discharge technique. Auger electron spectroscopy and Rutherford backscattering measurements show that the passivation film is mainly composed of sulfur and gallium, with the atomic ratio of gallium to sulfur close to 1:1. From X-ray diffraction measurement, the crystalline structure of GaS is identified to be polycrystalline hexagonal phase. The refractive index and dielectric constant of GaS have been measured. The breakdown strength of the GaS film is above 10(6) V/cm, which proves that GaS might also be used as an insulating film in the metal-insulator-semiconductor structure.
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页码：51 / 56
页数：6
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