Fabrication of 2D ordered arrays of cobalt silicide nanodots on (001)Si substrates

被引:13
作者
Cheng, S. L. [1 ]
Lu, S. W.
Wong, S. L.
Chang, C. C.
Chen, H.
机构
[1] Natl Cent Univ, Dept Chem & Mat Engn, Chungli, Taoyuan, Taiwan
[2] Natl Cent Univ, Inst Mat Sci & Engn, Chungli, Taoyuan, Taiwan
关键词
nanosphere lithography; self-assembly; epitaxy; cobalt silicide; nanodots;
D O I
10.1016/j.jcrysgro.2006.12.023
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Two-dimensional (2D) periodic arrays of Co metal and Co silicide nanodots were successfully fabricated on (0 0 I)Si substrate by using the polystyrene (PS) nanosphere lithography (NSL) technique and thermal annealing. The epitaxial CoSi2 was found to start growing in samples after annealing at 500 degrees C. The sizes of the Co silicide nanodots were observed to shrink with annealing temperature. From the analysis of the selected-area electron diffraction (SAED) patterns, the crystallographic relationship between the epitaxial CoSi2 nanodots and (001)Si substrates was identified to be [001]CoSi2//[001]Si and (200)CoSi2//(400)Si. By combining the planview and cross-sectional TEM examination, the epitaxial CoSi2 nanodots formed on (00 I)Si were found to be heavily faceted and the shape of the faceted epitaxial CoSi2 nanodot was identified to be inverse pyramidal. The observed results present the exciting prospect that with appropriate controls, the PS NSL technique promises to offer an effective and economical patterning method for the growth of a variety of large-area periodic arrays of uniform metal and silicide nanostructures on different types of silicon substrates. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:473 / 477
页数:5
相关论文
共 28 条
[1]   INTERFACIAL AND SURFACE ENERGETICS OF COSI2 [J].
ADAMS, DP ;
YALISOVE, SM ;
EAGLESHAM, DJ .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (09) :5190-5194
[2]   Structural relationship of polycrystalline cobalt silicide lines to (001) silicon substrate [J].
Alberti, A ;
La Via, F ;
Spinella, C ;
Rimini, E .
APPLIED PHYSICS LETTERS, 1999, 75 (19) :2924-2926
[3]   Large hexagonal arrays of aligned ZnO nanorods [J].
Banerjee, D ;
Rybczynski, J ;
Huang, JY ;
Wang, DZ ;
Kempa, K ;
Ren, ZF .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 80 (04) :749-752
[4]   Epitaxial growth of NiSi2 on (001)Si inside nanoscale contact holes prepared by atomic force microscope tip-induced local oxidation of the thin Si3N4 layer [J].
Chen, SY ;
Chen, LJ ;
Tzeng, SD ;
Gwo, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (05) :1905-1908
[5]   Fabrication of periodic nickel silicide nanodot arrays using nanosphere lithography [J].
Cheng, SL ;
Lu, SW ;
Li, CH ;
Chang, YC ;
Huang, CK ;
Chen, H .
THIN SOLID FILMS, 2006, 494 (1-2) :307-310
[6]   Ordered arrays of silicon nanowires produced by nanosphere lithography and molecular beam epitaxy [J].
Fuhrmann, B ;
Leipner, HS ;
Höche, HR ;
Schubert, L ;
Werner, P ;
Gösele, U .
NANO LETTERS, 2005, 5 (12) :2524-2527
[7]  
Glaczynska H, 2003, ACTA PHYS POL A, V104, P337
[8]   Pattern and feature designed growth of ZnO nanowire arrays for vertical devices [J].
He, JH ;
Hsu, JH ;
Wang, CW ;
Lin, HN ;
Chen, LJ ;
Wang, ZL .
JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (01) :50-53
[9]   Endotaxial silicide nanowires [J].
He, ZA ;
Smith, DJ ;
Bennett, PA .
PHYSICAL REVIEW LETTERS, 2004, 93 (25) :256102-1
[10]   Arrays of nanoscale magnetic dots: Fabrication by x-ray interference lithography and characterization [J].
Heyderman, LJ ;
Solak, HH ;
David, C ;
Atkinson, D ;
Cowburn, RP ;
Nolting, F .
APPLIED PHYSICS LETTERS, 2004, 85 (21) :4989-4991