Preparation of ultrafine InN powder by the nitridation of In2O3 or In(OH)3 and its thermal stability

被引:33
作者
Gao, L [1 ]
Zhang, QH [1 ]
Li, JG [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Surface Mi, Shanghai 200050, Peoples R China
关键词
D O I
10.1039/b208105a
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Crystalline InN powder has been prepared by the nitridation of In2O3 and In(OH)(3) with NH3 gas for the first time, and ultrafine InN powder in the size range 50-300 nm and with a specific surface area of 8 m(2) g(-1) has been obtained using In2O3 nanoparticles as the starting material. The resulting powders were characterized by XRD, FE-SEM, TEM, TG-DSC and BET surface area techniques. It was found that nanosized In2O3 was completely converted into InN at 600 degreesC within 8 h. The thermal stability of the ultrafine InN powder in air and under a nitrogen atmosphere was also investigated. It was observed that InN began to be oxidized into In2O3 at 389 degreesC and decomposed in the narrow temperature range of 595-696 degreesC in flows of air and N-2, respectively.
引用
收藏
页码:154 / 158
页数:5
相关论文
共 21 条
  • [1] Identification of Raman-active phonon modes in oriented platelets of InN and polycrystalline InN
    Dyck, JS
    Kim, K
    Limpijumnong, S
    Lambrecht, WRL
    Kash, K
    Angus, JC
    [J]. SOLID STATE COMMUNICATIONS, 2000, 114 (07) : 355 - 360
  • [2] Synthesis of bulk polycrystalline indium nitride at subatmospheric pressures
    Dyck, JS
    Kash, K
    Hayman, CC
    Argoitia, A
    Grossner, MT
    Angus, JC
    Zhou, WL
    [J]. JOURNAL OF MATERIALS RESEARCH, 1999, 14 (06) : 2411 - 2417
  • [3] A novel method for the synthesis of sub-microcrystalline wurtzite-type InxGa1-xN powders
    García, R
    Hirata, GA
    Farías, MH
    McKittrick, J
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 90 (1-2): : 7 - 12
  • [4] Electronic structure of indium nitride studied by photoelectron spectroscopy
    Guo, QX
    Nishio, M
    Ogawa, H
    Wakahara, A
    Yoshida, A
    [J]. PHYSICAL REVIEW B, 1998, 58 (23): : 15304 - 15306
  • [5] III-nitrides: Growth, characterization, and properties
    Jain, SC
    Willander, M
    Narayan, J
    Van Overstraeten, R
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (03) : 965 - 1006
  • [6] Thermal properties of indium nitride
    Krukowski, S
    Witek, A
    Adamczyk, J
    Jun, J
    Bockowski, M
    Grzegory, I
    Lucznik, B
    Nowak, G
    Wroblewski, M
    Presz, A
    Gierlotka, S
    Stelmach, S
    Palosz, B
    Porowski, S
    Zinn, P
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1998, 59 (03) : 289 - 295
  • [7] Raman spectra of indium nitride thin films grown by microwave-excited metalorganic vapor phase epitaxy on (0001) sapphire substrates
    Kwon, HJ
    Lee, YH
    Miki, O
    Yamano, H
    Yoshida, A
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (07) : 937 - 939
  • [8] Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy
    Lee, MC
    Lin, HC
    Pan, YC
    Shu, CK
    Ou, J
    Chen, WH
    Chen, WK
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (18) : 2606 - 2608
  • [9] Synthesis of nanocrystalline titanium nitride powders by direct nitridation of titanium oxide
    Li, JG
    Gao, L
    Sun, J
    Zhang, QH
    Guo, JK
    Yan, DS
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2001, 84 (12) : 3045 - 3047
  • [10] Li YG, 2002, J AM CERAM SOC, V85, P1294