Correlation between the infrared reflectance and microstructure of thin gallium nitride films grown on silicon substrates

被引：7

作者：

Hou, YT

Feng, ZC

Chen, J

Zhang, X

Chua, SJ

Lin, JY

机构：

[1] Inst Mat Res & Engn, Singapore 117602, Singapore

[2] Natl Univ Singapore, Dept Elect Engn, Ctr Optoelect, Singapore 119260, Singapore

[3] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore

来源：

SOLID STATE COMMUNICATIONS | 2000年 / 115卷 / 01期

关键词：

thin films; crystal structure and symmetry; dielectric response; optical properties; light absorption and reflection;

D O I：

10.1016/S0038-1098(00)00134-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Thin gallium nitride (GaN) films grown on silicon substrates are studied by infrared reflectance (IR) spectroscopy and scanning electron microscopy (SEM). For different samples, a variation of the reststrahlen band is observed. Through a theoretical analysis using a proposed three-component effective medium model, this variation of IR spectra is attributed to the polycrystalline nature of GaN grown on silicon, as revealed by SEM measurements. A correlation between the shape of the reststrahlen band and the microstructure of the GaN film is found. It shows that IR can offer a versatile means to characterize the quality of GaN on silicon. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：45 / 49

页数：5

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[21] GAN, AIN, AND INN - A REVIEW [J].