Kinetics of H2 (D2) desorption from a Ge(100)-2x1:H (D) surface studied using scanning tunneling microscopy and temperature programmed desorption

被引:29
作者
Lee, JY
Maeng, JY
Kim, A
Cho, YE
Kim, S [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305701, South Korea
[2] Korea Adv Inst Sci & Technol, Sch Mol Sci BK 21, Taejon 305701, South Korea
关键词
D O I
10.1063/1.1531662
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The kinetics of H-2 (D-2) desorption from a Ge(100)-2x1:H (D) surface was studied using scanning tunneling microscopy (STM) and temperature programmed desorption (TPD). Inspection of STM images of surfaces at the saturation coverage of H (D) (theta(H(D))similar or equal to1.0 ML) revealed a 2x1 monohydride (monodeuteride) phase in which most H (D) atoms were paired on Ge-dimers. By counting the sites of H-2 (D-2) desorption in STM images taken after desorption of H-2 (D-2) at temperatures in the range T-s=500-550 K, the desorption of H-2 (D-2) was found to follow first order kinetics with an activation energy of E-d=1.65+/-0.1 eV (1.65+/-0.1 eV) and a pre-exponential factor of nu(d)=(2.7+/-0.5)x10(13) s(-1) [(1.2+/-0.5)x10(13) s(-1)]. These values of E-d and nu(d) were used to simulate TPD spectra for the desorption of H-2 (D-2) from a Ge(100)-2x1:H (D) surface. The simulated spectra were in good agreement with the experimental TPD spectra. In contrast to the surfaces with saturated H coverage, which are characterized by pairs of H atoms on Ge-dimers, at the low H coverage of theta(H)similar or equal to0.05 ML unpaired H atoms as well as paired H atoms were observed on the Ge-dimers on the surface, causing the desorption process to follow second order kinetics. At T(s)similar to300 K, the singly occupied dimers (SODs) appear to be favored over doubly occupied dimers (DODs). However, upon increasing the temperature (T-s) from 300 to 500 K, most SODs were rapidly converted into the thermodynamically favored DODs by the migration of H atoms. On the other hand, it is observed that even above T(s)similar to500 K, the onset temperature for H-2 desorption from DODs, a non-negligible number of SODs remain on the surface due to the large entropic barrier to pairing. These results suggest that H adsorption in the low coverage is strongly influenced by the energetics of the pairing of H atoms. (C) 2003 American Institute of Physics.
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页码:1929 / 1936
页数:8
相关论文
共 43 条
[1]   SCANNING-TUNNELING-MICROSCOPY OF THE INTERACTION OF HYDROGEN WITH SILICON SURFACES [J].
BOLAND, JJ .
ADVANCES IN PHYSICS, 1993, 42 (02) :129-171
[2]   EVIDENCE OF PAIRING AND ITS ROLE IN THE RECOMBINATIVE DESORPTION OF HYDROGEN FROM THE SI(100)-2X1 SURFACE [J].
BOLAND, JJ .
PHYSICAL REVIEW LETTERS, 1991, 67 (12) :1539-1542
[3]   Reaction dynamics of molecular hydrogen on silicon surfaces [J].
Bratu, P ;
Brenig, W ;
Gross, A ;
Hartmann, M ;
Hofer, U ;
Kratzer, P ;
Russ, R .
PHYSICAL REVIEW B, 1996, 54 (08) :5978-5991
[5]   SURFACE PI-BONDING AND THE NEAR-1ST-ORDER DESORPTION-KINETICS OF HYDROGEN FROM GE(100)2X1 [J].
DEVELYN, MP ;
COHEN, SM ;
ROUCHOUZE, E ;
YANG, YL .
JOURNAL OF CHEMICAL PHYSICS, 1993, 98 (04) :3560-3563
[6]   ADSORPTION, DESORPTION, AND DECOMPOSITION OF HCL AND HBR ON GE(100) - COMPETITIVE PAIRING AND NEAR-FIRST-ORDER DESORPTION-KINETICS [J].
DEVELYN, MP ;
YANG, YML ;
COHEN, SM .
JOURNAL OF CHEMICAL PHYSICS, 1994, 101 (03) :2463-2475
[7]   PI-BONDED DIMERS, PREFERENTIAL PAIRING, AND 1ST-ORDER DESORPTION-KINETICS OF HYDROGEN ON SI(100)-(2X1) [J].
DEVELYN, MP ;
YANG, YML ;
SUTCU, LF .
JOURNAL OF CHEMICAL PHYSICS, 1992, 96 (01) :852-855
[8]   Effect of beam energy and surface temperature on the dissociative adsorption of H2 on Si(001) [J].
Dürr, M ;
Raschke, MB ;
Höfer, U .
JOURNAL OF CHEMICAL PHYSICS, 1999, 111 (23) :10411-10414
[9]   Real-space study of the pathway for dissociative adsorption of H2 on Si(001) -: art. no. 046104 [J].
Dürr, M ;
Hu, Z ;
Biedermann, A ;
Höfer, U ;
Heinz, TF .
PHYSICAL REVIEW LETTERS, 2002, 88 (04) :4
[10]   Probing high-barrier pathways of surface reactions by scanning tunneling microscopy [J].
Dürr, M ;
Biedermann, A ;
Hu, Z ;
Höfer, U ;
Heinz, TF .
SCIENCE, 2002, 296 (5574) :1838-1841