Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors

被引：60

作者：

Kim, Dongjo ^{[1
]}

Koo, Chang Young ^{[1
]}

Song, Keunkyu ^{[1
]}

Jeong, Youngmin ^{[1
]}

Moon, Jooho ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 10期

关键词：

amorphous semiconductors; gallium compounds; indium compounds; organic field effect transistors; semiconductor growth; sol-gel processing; thin film transistors; ZINC-OXIDE; TEMPERATURE;

D O I：

10.1063/1.3225555

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the influence of the chemical compositions of gallium and indium cations on the performance of sol-gel-derived amorphous gallium indium zinc oxide (a-GIZO)-based thin film transistors (TFTs). A systematic compositional study allowed us to understand the solution-processed a-GIZO TFTs. We generated a compositional ternary diagram from which we could predict electrical parameters such as saturation mobility, threshold voltage, and the on/off current ratio as the constituent compositions varied. This diagram can be utilized for tailoring solution-processed amorphous oxide TFTs for specific applications.

引用

页数：3

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